Rec Solar Pte. Ltd.

Alexandre Teixeira

Egor Vladimirov

Pouria Homayonifar

Kai Johansen

Per Bakke

The present invention relates to an arrangement for manufacturing crystalline silicon ingots by directional solidification, where the melt and carbonaceous structural parts of the crystallization furnace is protected from the fumes of the melt by applying a gas conduit which leads the fumes directly out of the directional solidification compartment of the furnace.

Arrangement for manufacturing crystalline silicon ingots

A multi-ingot furnace for the growth of crystalline semiconductor material has one or more heating devices for heating a hot zone in which crucibles containing semiconductor material are received. At least one of the heating devices is arranged to apply a predetermined differential heat flux profile across a horizontal cross-section of the semiconductor material in one or more of the crucibles, the predetermined differential heat flux profile being selected in dependence the position of the one or more crucibles in an array. In this manner, the heating device can at least partially compensate for differences in the temperature across the semiconductor material that arises from its geometric position in the furnace. This reduces the possibility of defects such as dislocations during the growth of a crystalline semiconductor material. Associated methods are also disclosed.

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Porsgrunn, Norway

Alexandre Teixeira