Avago Technologies General IP (singapore) Pte. Ltd.

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Avago Technologies Wireless IP (singapore) Pte. Ltd.

Centre National De La Recherche Scientifique

Stmicroelectronics S.a.

Avago Technologies International Sales Pte. Limited

Alexandre Shirakawa

Dariusz Burak

Phil Nikkel

Stefan Bader

John Choy

Chris Feng

Paul D Bradley

Patrick Wurm

Claire Auer (Wurm), Legal Representative

John Dwight Larson, Iii

Kevin J Grannen

Jyrki Kaitila

Didier Belot

Martin Handtmann

Eric Kerherve

Yann Deval

Robert Thalhammer

Tiberiu Jamneala

Qiang Zou

Jean-Baptiste David

Tina L Lamers

Moustapha El Hassan

Bernhard Ulrich Koelle

Thomas Faust

Sook Ching Chang

Andréia Cathelin

A bulk acoustic wave (BAW) resonator comprises: a first electrode; a second electrode comprising a plurality of sides, wherein at least one of the sides is a connection side; a piezoelectric layer disposed between the first and second electrodes, and an acoustic reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer, wherein an overlap of the reflective element, the first electrode, the second electrode, and the piezoelectric layer defines an active area of the acoustic resonator; a bridge adjacent to a termination of the active area of the BAW resonator; and a discontinuity disposed in the bridge.

Bulk acoustic wave (BAW) resonator structure

A ladder filter includes a plurality of series resonators and a plurality of shunt resonators connected between an input port and an output port. At least one of the series or shunt resonators include a bulk acoustic wave (BAW) resonator structure, which includes: a first electrode disposed over a substrate; an air cavity located in the substrate and below the first electrode; a piezoelectric layer disposed over the first electrode and comprising aluminum scandium nitride, the piezoelectric layer having a thickness in a range of approximately 1.0 microns to approximately 1.5 microns; and a second electrode disposed over the piezoelectric layer. The BAW resonator structure has an area, and the area is less than an area of a comparable BAW resonator structure comprising identical layers and materials except for an undoped aluminum nitride piezoelectric layer.

Bulk acoustic resonator comprising aluminum scandium nitride

An acoustic resonator device includes a bottom electrode disposed on a substrate over an air cavity, a piezoelectric layer disposed on the bottom electrode, and a top electrode disposed on the piezoelectric layer, where an overlap between the top electrode, the piezoelectric layer and the bottom electrode over the air cavity defines a main membrane region. The acoustic resonator device further includes at least one air-ring defining a boundary of the main membrane region, and at least one first frame formed between the bottom electrode and the piezoelectric layer or formed between the substrate and the bottom electrode, and a second frame formed between the piezoelectric layer and the top electrode.

Acoustic resonator device with at least one air-ring and frame

An acoustic resonator structure comprises a piezoelectric layer having a first surface and a second surface, a first electrode disposed adjacent to the first surface, and a second electrode disposed adjacent to the second surface. The first electrode comprises a first conductive layer disposed adjacent to the piezoelectric layer and having a first acoustic impedance, and a second conductive layer disposed on a side of the first conductive layer opposite the piezoelectric layer and having a second acoustic impedance greater than the first acoustic impedance. The second electrode may be disposed between a substrate and the piezoelectric layer, and it may comprise a third conductive layer disposed adjacent to the piezoelectric layer and having a third acoustic impedance, and a fourth conductive layer disposed on a side of the third conductive layer opposite the piezoelectric layer and having a fourth acoustic impedance greater than the third acoustic impedance.

Acoustic resonator comprising acoustic redistribution layers

In a representative embodiment, a bulk acoustic wave (BAW) resonator, comprises: a cavity disposed in a substrate; a first electrode disposed over the cavity; a planarization layer disposed adjacent to the first electrode; a piezoelectric layer disposed over the first electrode; and a second electrode disposed over the piezoelectric layer.

Planarized electrode for improved performance in bulk acoustic resonators

An acoustic resonator structure comprises a first electrode disposed on a substrate, a piezoelectric layer disposed on the first electrode, a second electrode disposed on the piezoelectric layer, a frame disposed within a main membrane region defined by an overlap between the first electrode, the piezoelectric layer, and the second electrode, and having an outer edge substantially aligned with a boundary of the main membrane region, and a collar formed separate from the frame, disposed outside the main membrane region, and having an inner edge substantially aligned with the boundary of or overlapping the main membrane region.

Acoustic resonator comprising collar and frame

A bulk acoustic wave (BAW) resonator device includes a substrate defining a cavity, a bottom electrode formed over the substrate and at least a portion of the cavity, a piezoelectric layer formed on the bottom electrode, and a top electrode formed on the piezoelectric layer. An air-wing and an air-bridge are formed between the piezoelectric layer and the top electrode, the air-wing having an inner edge that defines an outer boundary of an active region of the BAW resonator device. The BAW resonator device further includes a temperature compensation feature having positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric layer. The temperature compensation feature extends outside the active region by a predetermined length.

Acoustic resonator device with air-ring and temperature compensating layer

A bulk acoustic wave (BAW) resonator structure comprises a first electrode disposed over a substrate, a first piezoelectric layer disposed over the first electrode, a second electrode disposed over the first piezoelectric layer, and a collar structure disposed around a perimeter of an active region defined by an overlap between the first electrode, the second electrode, and the piezoelectric layer.

Acoustic resonator having collar structure

A film bulk acoustic resonator (FBAR) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is disposed between the first electrode and the piezoelectric layer.

Film bulk acoustic resonator comprising a bridge

A method of forming a double bulk acoustic resonator structure comprises forming a first electrode on a substrate, forming a first piezoelectric layer on the first electrode, forming a second electrode on the first piezoelectric layer, forming a second piezoelectric layer on the second electrode, and forming a third electrode on the second piezoelectric layer. The first and second piezoelectric layers are formed by a sputter deposition process using at least one sputter target comprising a combination of scandium and aluminum.

Double bulk acoustic resonator comprising aluminum scandium nitride

In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator. An inner raised region or an outer raised region, or both are disposed over the second upper electrode.

Coupled resonator filter comprising a bridge and frame elements

In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode.

Stacked acoustic resonator comprising a bridge

In a representative embodiment, a bulk acoustic wave (BAW) resonator comprises: a cavity provided in a first layer and having a perimeter bordering an active region of the BAW resonator, a distributed Bragg reflector (DBR) bordering the cavity, wherein the first layer is one of the layers of the DBR; a first electrode disposed over the substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode.

Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator

A bulk acoustic wave (BAW) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is formed within the piezoelectric layer, where the bridge is surrounded by piezoelectric material of the piezoelectric layer.

Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer

A device includes: a first electrode having a first electrode thickness; a first acoustic propagation layer disposed on the first electrode, the first piezo-electric layer having a first acoustic propagation layer thickness; a second electrode having a second electrode thickness; a second piezo-electric layer disposed on the first electrode, the second piezo-electric layer having a second acoustic propagation layer thickness; and a third electrode having a third electrode thickness, wherein the second electrode thickness is between 1.15 and 1.8 times the first electrode thickness. The first and third electrode thicknesses may be equal to each other, and the first and second piezo-electric layer thicknesses may be equal to each other. The first and third electrodes may be connected together to provide two acoustic resonators in parallel with each other.

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Alexandre Shirakawa