Centre National De La Recherche Scientifique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Université Paris-Sud 11

Université Paris Sud Xi

Université Paris-saclay

Alexandre Revcolevschi

Sylvain Franger

Alexandre Moradpour

Olivier Schneegans

Raphaël Salot

Oana Georgiana Dragos

Nita Dragoe

Loreynne Pinsard-Gaudart

The invention relates to a memristive element (M) formed by: a first electrode (); a second electrode (); and an active region () making direct electrical contact with said first and second electrodes, characterized in that said active region essentially consists of a thin film of an insertion compound containing at least one alkali metal, said compound being an oxide or chalcogenide of at least one transition metal and being able to conduct both electrons and ions. Non-volatile electronic memory formed from a plurality of such memristive elements.

Memristive element and electronic memory based on such elements

A device for mass storage of information, the device comprising: a substrate (); an electrically-conductive tip () for atomic force microscopy located above the surface () of said substrate () in electrical contact therewith; and a voltage generator () for applying a potential difference between said tip () and said substrate (); the device being characterized in that: said substrate () has a surface () of a material presenting electrical conductivity that is both electronic and ionic in nature; and in that said generator () is adapted to apply a potential difference that is sufficient to induce a redox reaction of said material that modifies the surface electrical conductivity of the substrate (). The use of such a device () for mass storage of information.

Device and method for information mass storage

Growing community of inventors

Boulogne, France

Alexandre Revcolevschi