Intel Corporation

Bobst Mex Sa

Alexandre Pauchard

Michael T Morse

Yimin Kang

Gadi Sarid

The invention relates to a method for checking the quality of a product () comprising at least two cardboard portions () connected to each other such that a slot () extends between the cardboard portions from one side of the product () to the opposite side, with the slot () being expected to extend perpendicularly with respect to an outer edge of the product (), comprising the steps of: The invention further relates to a machine for checking the quality of a product () made from at least two cardboard portions () connected to each other such that a slot () extends from one side of the product to the opposite side, with the slot being expected to extend perpendicularly with respect to an outer edge of the product, the machine comprising two cameras () adapted for capturing a 2D image in a stacking area for stacking the products, an image processing module () adapted for recognizing in the captured images the position of the slot on the two sides of the product, and an offset determination module () adapted for determining the amount of offset between the position of the slots at the opposite sides of the product.

Method and a machine for checking the quality of a product

An avalanche photodetector is disclosed. An apparatus according to aspects of the present invention includes a semiconductor substrate layer including a first type of semiconductor material. The apparatus also includes a multiplication layer including the first type of semiconductor material disposed proximate to the semiconductor substrate layer. The apparatus also includes an absorption layer having a second type of semiconductor material disposed proximate to the multiplication layer such that the multiplication layer is disposed between the absorption layer and the semiconductor substrate layer. The absorption layer is optically coupled to receive and absorb an optical beam. The apparatus also includes an n+ doped region of the first type of semiconductor material defined at a surface of the multiplication layer opposite the absorption layer. A high electric field is generated in the multiplication layer to multiply charge carriers photo-generated in response to the absorption of the optical beam received in the absorption layer.

Inverted planar avalanche photodiode

An avalanche photodetector is disclosed. An apparatus according to aspects of the present invention includes a mesa structure defined in a first type of semiconductor. The first type of semiconductor material includes an absorption region optically coupled to receive and absorb an optical beam. The apparatus also includes a planar region proximate to and separate from the mesa structure and defined in a second type of semiconductor material. The planar region includes a multiplication region including a p doped region adjoining an n doped region to create a high electric field in the multiplication region. The high electric field is to multiply charge carriers photo-generated in response to the absorption of the optical beam received in the mesa structure.

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Châtel-St-Denis, Switzerland

Alexandre Pauchard