Electrowatt Technology Innovation Ag

Sentron Ag

Alexandre Pauchard

Radivoje Popovic

Robert Racz

Dragan Manic

Adrian Flanagan

Alexis Rochas

Reinoud Felix Wolffenbuttel

A pn-junction in a semiconductor element is made in that, within a zone of a first conductivity type, by means of implantation, a first and second zone of a second conductivity type are formed which are initially separated from each other, with subsequent diffusion processes, as a result of lateral diffusion, the first and second zones combine into a connected well, by means of implantation, a further zone of the first conductivity type is formed which completely overlaps the first zone of the second conductivity type and which is larger than the first zone, and which does not touch the second zone of the second conductivity type.

Method of making a pn-junction in a semiconductor element

A flame detector with a radiation sensor ( ) sensitive in the ultra-violet and/or visible range of the electro-magnetic spectrum, forms from the signal U at the output of the radiation sensor, a first signal U which is proportional to the direct voltage portion of the signal U , and a second signal U which is proportional to the alternating voltage portion of the signal U . The output signal UA of the flame detector is formed such that UA&equals;U &minus;U . Ignition sparks can thereby be effectively suppressed.

Flame detector

The photosensitive semiconductor element according to the invention comprises a substrate,, an intermediate layer,and an outer layer,, wherein the intermediate layer,is at least partially embedded within the substrate,and the outer layer,is at least partially embedded within the intermediate layer,and the intermediate layer,and the outer layer,form a photosensitive region,for the generation of a light-dependent signal R such as for example a photocurrent. In this arrangement the outer layer,is divided into mutually spaced regions,which are separated by intermediate regions,of the intermediate layer,. The spaced regions,of the outer layer then serve for example as the anode,of the photosensitive semiconductor element which can be connected to a suitable electronic evaluation arrangement. The spaced regions,prevent the formation of an inactive layer,which, by virtue of recombination phenomena in respect of charge carriers, results in a reduction in the photocurrent produced by the incident light.

Photosensitive semiconductor element having an outer layer divided into mutually spaced regions

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Progens, Switzerland

Alexandre Pauchard