Norstel Ab

Siced Electronics Development Gmbh & Co Kg

Alexandre Ellison

Björn Magnusson

Heinz Mitlehner

Dietrich Stephani

Peter Friedrichs

Asko Vehanen

Christer Hallin

Erik Janzén

Peder Bergman

Peter Råback

Nguyen Tien Son

Peter Raback

A semiconductor device including a drift zone of a first conductivity type serving as a substrate layer having a front side and a back side. A first contact electrode is arranged at the front side of the drift zone. A control region is arranged at the front side and controls an injection of carriers of at least the first conductivity type into the drift zone. A second contact electrode is arranged at the backside of the drift zone. The drift zone is arranged to carry a carrier flow between the first and the second contact electrode. The drift zone includes a silicon carbide wafer with a net carrier concentration less than 10cmand a carrier lifetime of at least 50 ns.

Lightly doped silicon carbide wafer and use thereof in high power devices

A wafer including a SiC substrate having a surface that is inclined relative to a (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree, a SiC homoepitaxial device layer, and a SiC homoepitaxial boundary layer having a thickness up to 1 &#x3bc;m arranged between the substrate and the device layer. The boundary layer has been grown on the substrate under an atmosphere of lower supersaturation than when forming the device layer and at a C/Si ratio above 1.

Homoepitaxial growth of SiC on low off-axis SiC wafers

A method for manufacturing a silicon carbide single crystal. A silicon carbide single crystal is grown. The crystal has a boron concentration less than 5&#xd7;10cm, and a concentration of transition metals impurities less than 5&#xd7;10cm. Intrinsic defects in the crystal are minimised. The intrinsic defects include silicon vacancies or carbon vacancies. The crystal is annealed for a desired time at a temperature above 700&#xb0; C. in an atmosphere containing any of the gases hydrogen or a mixture of hydrogen and an inert gas, such that the density of intrinsic defects and any associated defects is decreased to a concentration low enough to confer to the crystal a desired carrier life time of at least 50 ns at room temperature.

A method for producing, on an SiC substrate, SiC homoepitaxial layers of the same polytype as the substrate. The layers are grown on a surface of the SiC substrate, wherein the surface is inclined relative to the (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree. An homoepitaxial growth is started by forming a boundary layer with a thickness up to 1 &#x3bc;m.

A uniform silicon carbide single crystal with either an n-type or a p-type conductivity. The crystal has a net carrier concentration less than 10cmand a carrier lifetime of at least 50 ns at room temperature.

A method and a device to grow from the vapor phase, a single crystal of either SiC, a group III-nitride, or alloys thereof, at a growth rate and for a period of time sufficient to produce a crystal of preferably several centimeters length. The diameter of the growing crystal may be controlled. To prevent the formation of undesirable polycrystalline deposits on surfaces in the downstream vicinity of the single crystal growth area, the local supersaturation of at least one component of the material grown is lowered by introducing a separate gas flow comprising at least one halogen element or a combination of said halogen and hydrogen species.

Device and method for producing single crystals by vapor deposition

The purpose of the invention is to provide a high resistivity silicon carbide substrate with electrical properties and structural quality suitable for subsequent device manufacturing, such as for example high frequency devices, so that the devices can exhibit stable and linear characteristics and to provide a high resistivity silicon carbide substrate having a low density of structural defects and a substantially controlled uniform radial distribution of its resistivity.

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Linköping, Sweden

Alexandre Ellison