S.o.i.tec Silicon on Insulator Technologies

Soitec

S.o.i. Tec Silicon on Insulator Technologies, S.a.

Alexandra Abbadie

Bernd Kolbesen

Jochen Maehliss

Oleg Kononchuk

Walter Schwarzenbach

Eric Neyret

Luciana Capello

A chromium-free etching composition suitable for treating various silicon-containing surfaces, including strained silicon on insulator surfaces as well as stressed silicon surfaces. The etching composition invention includes hydrofluoric acid, nitric acid, acetic acid and an alkali iodide, preferably potassium iodide, present in an amount of 1 mmol/100 ml or more.

Etching composition, in particular for strained or stressed silicon materials, method for characterizing defects on surfaces of such materials and process of treating such surfaces with the etching composition

The present invention concerns an improved method for treating germanium surfaces in order to reveal crystal defects.

Method for treating germanium surfaces and solutions to be employed therein

The invention relates to a method for fabricating a semiconductor on insulator substrate, in particular a silicon on insulator substrate by providing a source substrate, providing a predetermined splitting area inside the source substrate by implanting atomic species, bonding the source substrate to a handle substrate, detaching a remainder of the source substrate from the source-handle component at the predetermined splitting area to thereby transfer a device layer of the source substrate onto the handle substrate, and thinning of the device layer. To obtain semiconductor on insulator substrates with a reduced Secco defect density of less than 100 per cmthe implanting is carried out with a dose of less than 2.3&#xd7;10atoms per cmand the thinning is an oxidation step conducted at a temperature of less than 925&#xb0; C.

Method for fabricating a semiconductor on insulator substrate with reduced Secco defect density

The present invention relates to a novel etching solution suitable for characterizing defects on semiconductor surfaces, including silicon germanium surfaces, as well as a method for treating semiconductor surfaces with an etching solution as disclosed herein. This novel etching solution is chromium-free and enables a highly sufficient etch rate and highly satisfactory etch results.

Chromium-free etching solution for si-substrates and uses therefor

The present invention relates to a method for characterizing defects on silicon surfaces, such as silicon wafers, a method for treating silicon surfaces with an etching solution, and an etching solution to be employed in the treating and defect characterization of such silicon wafer surfaces.

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Le Versoud, France

Alexandra Abbadie