Infineon Technologies Austria Ag

Alexander Zesar

Silke Auchter

Helmut Schoenherr

Clemens Rössler

Lina Purwin

Matthias German Dietl

Peter Oles

A device for controlling trapped ions includes a substrate. A first metal layer is disposed over the substrate. An insulating layer is disposed over the first metal layer. A structured second metal layer is disposed over the insulating layer. The structured second metal layer includes an electrode of an ion trap configured to trap ions in a space above the structured second metal layer. The electrode of the structured second metal layer and the first metal layer overlap each other. The device further includes a void space in the insulating layer between the first metal layer and the electrode of the structured second metal layer, the void space including a vacuum at least during operation of the device.

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Villach, Austria

Alexander Zesar