Infineon Technologies Austria Ag

Alexander Zesar

Clemens Rössler

Matthias German Dietl

Lina Purwin

Silke Auchter

Helmut Schoenherr

Michael Sieberer

Sebastian Ludwig Habicht

Peter Oles

A device for controlling trapped ions includes a substrate. An electrode structure is mounted on the substrate. The electrode structure includes DC electrodes and RF electrodes of an ion trap configured to trap ions in a space above the substrate. A temperature sensor is disposed at the substrate and configured to sense temperatures below 50K.

Device for controlling trapped ions having a temperature sensor

A device for controlling trapped ions includes a substrate. A first metal layer is disposed over the substrate. An insulating layer is disposed over the first metal layer. A structured second metal layer is disposed over the insulating layer. The structured second metal layer includes an electrode of an ion trap configured to trap ions in a space above the structured second metal layer. The electrode of the structured second metal layer and the first metal layer overlap each other. The device further includes a void space in the insulating layer between the first metal layer and the electrode of the structured second metal layer, the void space including a vacuum at least during operation of the device.

Device for controlling trapped ions with low heat dissipation

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Villach, Austria

Alexander Zesar