E.i. Dupont De Nemours and Company

Alexander Zak Bradley

David Lincoln Thorn

Jeffery Scott Thompson

Kyung-Ho Park

Jeffrey Scott Thompson

Jeffery Scott Thornpson

Jeffrey A Merlo

Provided are novel 1,3-diimine copper complexes, and processes for using 1,3-diimine copper complexes in the deposition of copper on substrates, or in or on porous solids, by atomic layer deposition.

Volatile copper(1) complexes and processes for deposition of copper films by atomic layer deposition

The present invention relates to novel 1,3-diimines and 1,3-diimine copper complexes and the use of 1,3-diimine copper complexes for the deposition of copper on substrates or in or on porous solids in an atomic layer deposition process.

Copper (II) complexes for deposition of copper films by atomic layer deposition

There are provided compounds of Ir(III) having &#x3b2;-diketimine ligands including the complexes having Formula I: L is the same or different at each occurrence and is a cyclometalating bidentate monoanionic ligand coordinated through a nitrogen atom and a carbon atom. Rand Rcan be the same or different and are independently selected from hydrogen, halogen, alkyl, aryl, alkylaryl and heterocyclic groups. Rand Rcan be the same or different and are independently selected from hydrogen, halogen, alkyl, aryl, alkylaryl, trialkylsilyl, triarylsilyl, and heterocyclic groups. Ris hydrogen, alkyl, aryl, alkylaryl, heterocyclic groups, or fluorine. Adjacent R groups can join together to form 5- or 6-membered rings. Ris H, F, or alkyl. There are also provided electronic devices containing such compounds.

Electroluminescent complexes of Ir(III) and devices

Methods of depositing a copper film onto the surface of a substrate from a supercritical solution containing copper-containing precursors having monoanionic bidentate and neutral monodentate ligands, which comprise contacting the substrate with the solution; heating the substrate to a temperature between about 60&#xb0; C. and less than 150&#xb0; C.; and forming a copper-containing film on at least a portion of the substrate surface. Also provided are copper-containing precursor compositions used therein.

Method of copper deposition from a supercritical fluid solution containing copper (I) complexes with monoanionic bidentate and neutral monodentate ligands

The present invention relates to a process for the synthesis of novel 1,3-diimine copper complexes using amino-imines and novel amino-imines.

Volatile copper(II) complexes for deposition of copper films by atomic layer deposition

The present invention relates to novel 1,3-diimine copper complexes and the use of 1,3-diimine copper complexes for the deposition of copper on substrates or in or on porous solids in an Atomic Layer Deposition process.

Volatile copper (II) complexes and reducing agents for deposition of copper films by Atomic Layer Deposition

The composition relates to amino-imine compounds used in the formation of 1,3-diimine copper complexes for deposition of copper films.

Composition comprising amino-imine compounds

Volatile copper(II) complexes and reducing agents for deposition of copper films by atomic layer deposition

The present invention relates to novel 1,3-diimine copper complexes and the use of 1,3-diimine copper complexes for the deposition of copper on substrates or in or on porous solids in an Atomic Layer Deposition process. This invention also provides a process for making amino-imines and novel amino-imines.

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Drexel Hill, PA, United States of America

Alexander Zak Bradley