Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Alexander Walter

Matthias Peter

Tobias Meyer

Joachim Hertkorn

Tetsuya Taki

Rainer Butendeich

Juergen Off

Christian Leirer

Hubert Maiwald

Werner Bergbauer

Andreas Loeffler

Dario Schiavon

Hans-Jürgen Lugauer

Jürgen Off

Peter Stauss

Nikolaus Gmeinwieser

Tobias Gotschke

Marcus Eichfelder

A light-emitting diode includes a semiconductor body and electrical connection points for contacting the semiconductor body, the semiconductor body including an active region including a quantum well that generates electromagnetic radiation, a first region and a second region that impede passage of charge carriers from the active region, wherein the semiconductor body is based on a nitride compound semiconductor material, the first region is directly adjacent to the active region on a p-side, the second region is arranged on a side of the first region facing away from the active region, the first region has an electronic band gap larger than the electronic band gap of the quantum well and less than or equal to an electronic band gap of the second region, the first region and the second region contain aluminum, and the active region emits electromagnetic radiation having a peak wavelength of less than 480 nm.

Optoelectronic semiconductor body and light-emitting diode

A semiconductor body is disclosed. In an embodiment a semiconductor body includes an n-doped region comprising a first layer sequence comprising pairs of alternating layers, wherein a first layer and a second layer of each pair differ in their doping concentration, and wherein the first and second layers of each pair have the same material composition except for their doping and a second layer sequence comprising pairs of alternating layers, wherein a first layer and a second layer of each pair differ in their material composition, an active region, wherein the second layer sequence is disposed between the first layer sequence and the active region and a p-doped region, wherein the active region is disposed between the n-doped region and the p-doped region.

Semiconductor body

An optoelectronic semiconductor body includes an active region including a quantum well that generates electromagnetic radiation, a first region that impedes passage of charge carriers from the active region, and a second region that impedes passage of charge carriers from the active region, wherein the semiconductor body is based on a nitride compound semiconductor material, the first region is directly adjacent to the active region on a p-side, the second region is arranged on a side of the first region facing away from the active region, the first region has an electronic band gap larger than the electronic band gap of the quantum well and less than or equal to an electronic band gap of the second region, and the first region and the second region contain aluminum.

Optoelectronic semiconductor body and light emitting diode

An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a first semiconductor layer sequence having a plurality of microdiodes, and a second semiconductor layer sequence having an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.

Optoelectronic semiconductor chip and method for fabrication thereof

A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.

Light-emitting semiconductor chip

An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.

An optoelectronic semiconductor component includes a layer sequence including a p-doped layer, an n-doped layer and an active zone that generates electromagnetic radiation arranged between the n-doped layer and the p-doped layer, wherein the n-doped layer includes at least GaN, an interlayer is arranged in the n-doped layer, wherein the interlayer includes AlGaN, wherein 0&#x3c;x&#x2266;1, and the interlayer includes magnesium.

Semiconductor component comprising an interlayer

The invention concerns an optoelectronic component comprising a layer structure with a light-active layer. In a first lateral region the light-active layer has a higher density of V-defects than in a second lateral region.

Optoelectronic component and method for the production thereof

An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.

An optoelectronic semiconductor chip includes an epitaxially grown semiconductor layer sequence based on GaN, InGaN, AlGaN and/or InAlGaN, a p-doped layer sequence, an n-doped layer sequence, an active zone that generates an electromagnetic radiation and is situated between the p-doped layer sequence and the n-doped layer sequence, and at least one AlxGa1-xN-based intermediate layer where 0&#x3c;x&#x2266;1, which is situated at a same side of the active zone as the n-doped layer sequence.

Optoelectronic semiconductor chip and use of an intermediate layer based on AlGaN

An optoelectronic semiconductor chip is specified, which has an active zone () containing a multi quantum well structure provided for generating electromagnetic radiation, which comprises a plurality of successive quantum well layers (). The multi quantum well structure comprises at least one first quantum well layer (), which is n-conductively doped and which is arranged between two n-conductively doped barrier layers () adjoining the first quantum well layer. It comprises a second quantum well layer (), which is undoped and is arranged between two barrier layers () adjoining the second quantum well layer, of which one is n-conductively doped and the other is undoped. In addition, the multi quantum well structure comprises at least one third quantum well layer (), which is undoped and which is arranged between two undoped barrier layers () adjoining the third quantum well layer.

Growing community of inventors

Laaber, Germany

Alexander Walter