Advanced Micro Devices Corporation

Alexander W Schaefer

David Hugh McIntyre

Floyd L Dankert

Amy M Novak

Stephen Victor Kosonocky

John J Wuu

Russell J Schreiber

Jerry D Moench

Joel Thornton Irby

Grady L Giles

Michael K Ciraula

Victor F Andrade

Gregory A Constant

Ravi T Jotwani

Randal L Posey

Michael C Braganza

Samiul Haque Khan

Soolin Kao Chrudimsky

Jan Michael Huber

A system and method for efficient power, performance and stability tradeoffs of memory accesses under a variety of conditions are described. A system management unit in a computing system interfaces with a memory and a processing unit, and uses boosting of word line voltage levels in the memory to assist write operations. The computing system supports selecting one of multiple word line boost values, each with an associated cross-over region. A cross-over region is a range of operating voltages for the memory used for determining whether to enable or disable boosting of word line voltage levels in the memory. The system management unit selects between enabling and disabling the boosting of word line voltage levels based on a target operational voltage for the memory and the cross-over region prior to updating the operating parameters of the memory to include the target operational voltage.

Programmable write word line boost for low voltage memory operation

A dynamic NOR circuit includes a pre-charge transistor coupled between a first voltage supply node and a dynamic node to pre-charge the dynamic node. The dynamic NOR circuit includes a first keeper circuit having a first keeper transistor and a second keeper transistor serially coupled between the first voltage supply node and the dynamic node. The dynamic NOR circuit includes a first pull down circuit coupled between the dynamic node and ground. A first input signal is coupled to a gate of a first pull-down transistor in the first pull-down circuit and is also coupled to a gate of the first keeper transistor. A first keeper enable signal is coupled to a gate of the second keeper transistor. Additional keeper circuits and pull down circuits coupled to the dynamic node allow the dynamic NOR structure to handle a plurality of input signals.

Contention-free dynamic logic

An integrated circuit. The integrated circuit includes a plurality of logic circuits. The integrated circuit further includes a scan chain including a plurality of scan elements coupled in series, wherein the scan chain is configured to load stimulus data to be applied to the logic circuits for testing. The scan chain is further configured to capture data subsequent to applying the stimulus data. The integrated circuit also includes an embedded memory having a read port, wherein the read port is coupled to one or more of the plurality of logic circuits via a read path. The embedded memory includes a virtual entry having a plurality of scan-controllable storage elements. During testing, the virtual entry is operable to apply transition data to the read path in order to cause logic state transitions in the one or more logic circuits in the read path.

Apparatus for testing embedded memory read paths

A circuit for implementing memory arrays using a global bitline domino read/write scheme. The memory circuit includes a plurality of cells each configured to store a bit of data. The memory circuit further includes a plurality of local bitlines, wherein each cells is coupled to one of the local bitlines. Each of the plurality of local bitlines is a differential bitline having a signal path and a complementary signal path which are cross-coupled by a pair of transistors.

Memory array with global bitline domino read/write scheme

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Austin, TX, United States of America

Alexander W Schaefer