Samsung Display Co., Ltd.

Samsung Mobile Display Co., Ltd.

Samsung Displayco., Ltd.

Alexander Voronov

Gyoo-Wan Han

Gyoo Wan Han

Gyoowan Han

Cheol-Lae Roh

Emil Aslanov

Kyung-Hoe Heo

Tae-Wook Kang

Jaeseok Park

Hyoung-Joo Kim

Hyun-Chul Lee

HyungSik Kim

Akifumi Sangu

Suk-Ho Lee

Taekil Oh

Seungho Myoung

Wonyong Kim

Eun Sun Choi

Jae-Seung Yoo

Jinhong Jeun

Hyung-Sik Kim

Jae-Seok Park

Jin-Han Park

Jekil Ryu

Won-Kyu Lim

Ku Hyun Kang

Jooseob Ahn

Seok-Ho Lee

Je-Kil Ryu

Junghwa You

Jong-Dae Kim

Woohyun Jung

Joongsung Lee

Hyeongmin Ahn

Sunggyu Park

Hyeonsuk Guak

Konstantin Mishchik

Kihun Kim

Nang-Lyeom Oh

Ji-Hun Jung

Dmitry Maslov

Ji-Hunny Jung

An optical system includes a phase retardation plate which controls a polarization of an input laser beam, an axicon lens spaced apart from the phase retardation plate on an emitting surface side thereof to convert the input laser beam into a single first Bessel beam having a single cone angle, a collimating lens spaced apart from the axicon lens on an emitting surface side thereof to collimate the single first Bessel beam in a form of a single second Bessel beam having an annular energy distribution, a polarizing beam splitter spaced apart from the collimating lens on an emitting surface side thereof to split the single second Bessel beam into third Bessel beams having different polarization directions, and a focusing lens spaced apart from the polarizing beam splitter on an emitting surface side thereof to focus the plurality of third Bessel beams to form an output laser beam.

Optical system

An apparatus for manufacturing a deposition mask including a stage on which a mask substrate is mounted, a light source configured to irradiate a laser beam, a beam splitter configured to split the irradiated laser beam into a plurality of laser beams, a scanner configured to simultaneously scan the plurality of laser beams onto the mask substrate, and a tuner configured to finely change irradiation states of the plurality of laser beams to correspond to shapes of a plurality of pattern holes, while the plurality of laser beams are scanned.

Deposition mask manufacturing apparatus

An inspection method includes irradiating a laser to an inspection target, reflecting a first emitted laser from a transmission layer included in the inspection target, reflecting a second emitted laser from a scattering layer included in the inspection target, detecting a reference image from the second emitted laser; and measuring a separation distance obtained from the first emitted laser, based on the reference image.

Inspection method and inspection apparatus for performing the same

A laser processing apparatus according to an exemplary embodiment includes: a light source generating a laser beam; and a light converging unit converging the laser beam to a focal point on an object to be processed, wherein the light converging unit includes a first optical element including a through hole penetrating the first optical element; a second optical element including a first region reflecting the laser beam and a second region transmitting the laser beam; and a third optical element including a focusing lens as a convex lens, a lower surface of the first optical element is a concave mirror, and an upper surface of the second optical element is convex and a lower surface thereof is concave.

Laser processing apparatus

A method of manufacturing a glass includes forming a first etch protection layer on a first surface of a glass substrate, and forming a second etch protection layer on a second surface of the glass substrate; removing a part of the first protection layer and a part of the second protection layer by applying a laser pulse penetrating the glass substrate from above the first surface of the glass substrate; forming a cut part in the glass substrate by etching the glass substrate using an etching solution; and removing the first etch protection layer and the second etch protection layer. The second surface is opposite to the first surface.

Glass and method of manufacturing the same

A method of manufacturing a deposition mask includes: a splitting process in which a laser beam irradiated from a light source is split into a plurality of laser beams; a scanning process in which the plurality of laser beams are simultaneously scanned onto the mask substrate; and a tuning process in which irradiation states of the plurality of laser beams are finely changed to correspond to shapes of the plurality of pattern holes while the plurality of laser beams are scanned.

Deposition mask manufacturing method and manufacturing apparatus thereof

A laser processing apparatus includes a light source configured to generate a laser beam, and a light converging optical system configured to converge laser beam to a focal point at an object to be processed, the light converging optical system including a through-hole optical element and a composite optical element under the through-hole optical element, wherein the through-hole optical element includes a first recess portion configured as a concave mirror at a lower surface of the through-hole optical element, and wherein an upper surface of the composite optical element is convex and includes a first region configured to reflect the laser beam and a second region configured to transmit the laser beam.

An F-theta lens includes a diffractive optical element and a plurality of spherical lenses. The diffractive optical element includes multi-level diffractive structure having three or more levels and defined on a surface thereof, and the diffractive optical element is arranged before the spherical lenses on a path of a laser beam.

F-theta lens having diffractive optical element and optical system including the F-theta lens

A patterning apparatus includes a laser generator, at least one lens, a detector, and a controller. The laser generator generates a first laser beam and a second laser beam having different intensities. The at least one lens irradiates the first laser beam to form a pattern in a substrate, irradiates a second laser beam to determine a defect of the pattern, and condenses reflected beams generated as the second laser beam is reflected from the substrate. The detector converts the reflected beams to electrical signals. The controller determines a defect of the pattern based on the electrical signals.

Patterning apparatus and operating method thereof

A shearing interferometer includes first and second shearing plates disposed opposite to each other. The first shearing plate includes a first front surface and a first back surface, and splits an input beam input to the first front surface into first and second beams reflected at the first front and back surfaces, respectively. The second shearing plate includes a second front surface and a second back surface. The second shearing plate splits the first beam into third and fourth beams reflected at the second front and back surfaces, respectively, and splits the second beam into fifth and sixth beams reflected at the second front and back surfaces, respectively. Each of the first and second shearing plates has a thickness which limits a phase delay between the fourth beam and the fifth beam to a degree determined to allow interference to occur between the fourth beam and the fifth beam.

Shearing interferometer using two opposing shearing plates for laser

A method for inspecting a polysilicon layer includes: radiating excitation light to the polysilicon layer; and detecting a photoluminescence signal generated by the excitation light, wherein average power of the excitation light has a range of 1 W/cmto 10 W/cm, and peak power of the excitation light has a range of 100 W/cmto 1000 W/cm.

Method for inspecting polysilicon layer

A method for performing a laser crystallization is provided. The method includes generating a laser beam, refracting the laser beam to uniformize an intensity of the laser beam at a focal plane of the laser beam. The laser beam whose intensity is uniformized is applied into an object substrate mounted with a stage.

Method for performing laser crystallization

A method for detecting a defect of a barrier film includes preparing a device including an electrode and a barrier film covering the electrode, allowing a charged medium to contact a surface of the barrier film, and measuring a change in a flow of current between the charged medium and the electrode.

Barrier film defect detecting method and apparatus

An apparatus for monitoring deposition rate, an apparatus including the same, for depositing an organic layer, a method of monitoring deposition rate, and a method of manufacturing an organic light emitting display apparatus using the same, are provided. The deposition rate monitoring apparatus for measuring deposition rate of a deposition material discharged from a deposition source, includes: a light source for irradiating light having a wavelength within a photoexcitation bandwidth of the deposition material; a first optical system for irradiating the light emitted from the light source toward the discharged deposition material; a second optical system for collecting the light emitted from the deposition material; and a first light sensor for detecting the amount of the light which is emitted from the deposition material and collected in the second optical system.

Apparatus for monitoring deposition rate, apparatus provided with the same for depositing organic layer, method of monitoring deposition rate, and method of manufacturing organic light emitting display apparatus using the same

A method of measuring conductivity of a silicon thin film is provided. By the method, a capacitive sensor is positioned over a silicon thin film sample with an air-gap between the sensor and the sample, a size of the air-gap is measured using the capacitive sensor while an excitation light source module is turned off, an excitation light is illuminated on the silicon thin film sample by turning on the excitation light source module, where the excitation light is an ultraviolet light, a conductivity change of the silicon thin film sample is measured using the capacitive sensor, and a measurement error due to a deviation of the air-gap is eliminated by normalizing the conductivity change based on a measurement result of the size of the air-gap.

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Yongin, South Korea

Alexander Voronov