Applied Materials, Inc.

Other

Alexander Viktorovich Garachtchenko

Tsutomu Tanaka

Dmitry A Dzilno

John C Forster

Cong Trinh

Keiichi Tanaka

Maribel Maldonado-Garcia

Li-Qun Xia

Anantha K Subramani

Kallol Bera

Mihaela A Balseanu

Kevin Griffin

Jared Ahmad Lee

Jozef Kudela

Edward P Hammond

Moshe Sarfaty

Kenric T Choi

Mario Dave Silvetti

Robert B Moore

Kenichi Ohno

Xiaopu Li

Samuel Suresh Martin

Rakesh Ramadas

Marc David Shull

Mike Murtagh

Avinash Ishwar Shervegar

Yuval Ben-Dov

Zohreh Razavi Hesabi

Vipin Jose

Saloni Sawalkar

Kendrick H Chaney

A semiconductor processing chamber for processing semiconductor substrates may include a pedestal to support a substrate with a heater zones and a wire mesh configured to deliver a Radio Frequency (RF) signal to a plasma. The chamber may also include heater zone controls that deliver current to the heater zones and a filter circuit between the heater zone controls and the heater zones. The filter circuit may include inductors on leads from the heater zones and a resonant circuit with a resonant inductor that is magnetically coupled to the lead inductors. The resonant circuit may produce a resonant peak that filters the RF signal delivered to the wire mesh from the leads from the heater zones to prevent the RF signal from reaching the heater zone controls.

Magnetically coupled RF filter for substrate processing chambers

Methods of depositing thin films for an electronic device, for example a semiconductor device include applying a first pulsed plasma with or without a reactant and a second continuous plasma with a reactant.

Thin layer deposition with plasma pulsing

An system, method and software for controlling processes of an auto-refill system of an ampoule including one or more sensors configured to determine one or more liquid level heights within the ampoule. The auto-refill system having a state machine configured to control the auto-refill system, the state machine having one or more states for refilling the ampoule.

Control of liquid delivery in auto-refill systems

Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side and a dielectric adjacent a second side. A first microwave generator is electrically coupled to the first end of the powered electrode through a first feed and a second microwave generator is electrically coupled to the second end of the powered electrode through a second feed.

Microwave plasma source for spatial plasma enhanced atomic layer deposition (PE-ALD) processing tool

A plasma source assembly for use with a substrate processing chamber is described. The assembly includes a ceramic lower plate with a plurality of apertures formed therein. A method of processing a substrate in a substrate processing chamber including the plasma source assembly is also described.

Plasma source with ceramic electrode plate

Apparatus and methods for depositing and treating or etching a film are described. A batch processing chamber includes a plurality of processing regions with at least one plasma processing region. A low frequency bias generator is connected to a susceptor assembly to intermittently apply a low frequency bias to perform a directional treatment or etching the deposited film.

Geometrically selective deposition of dielectric films utilizing low frequency bias

Apparatus and methods of processing a substrate in a plasma enhanced spatial atomic layer deposition chamber. A substrate is moved through one or more plasma processing regions and one or more non-plasma processing regions while the plasma power is pulsed to prevent a voltage differential on the substrate from exceeding a breakdown voltage of the substrate or device being formed on the substrate.

Spatial atomic layer deposition chamber with plasma pulsing to prevent charge damage

Progress of a semiconductor fabrication process is monitored by detecting data output by the process, and then correlating a specific process event to fluctuations in the output data over a time period of 10 milliseconds or less. In one embodiment, endpoint of a plasma chamber cleaning process may be identified by calculating standard deviation of intensity of optical chamber emissions based upon a local time period. The time at which standard deviation of optical emissions attains a steady state indicates endpoint of the cleaning process. Another approach to characterizing fluctuation is to perform a Fast Fourier Transform (FFT) on the output emissions data, and then to plot over time the total power of the emissions over a relevant frequency range. The time at which total power attains a steady state also reveals endpoint of the process. Other techniques for characterizing fluctuation for process monitoring include calculation of the root-mean-square or entropy of an output signal.

Detection of process endpoint through monitoring fluctuation of output data

A low-noise amplifier is disclosed that is capable of amplifying a signal with high gain (e.g., &gt;60 dB) and low noise (e.g., &lt;2 nV/Hz.sup.-1/2) over a large frequency bandwidth (e.g., from 1 Hz to 1 MHz) and with a high input impedance (e.g., &gt;10.sup.6 .OMEGA.), high common mode rejection and high immunity to external noise sources. An illustrative embodiment of the present invention comprises: a first field-effect transistor having a first lead, a second lead and a third lead; a second field-effect transistor having a first lead, a second lead and a third lead, wherein the first lead of the first field-effect transistor is electrically connected to the first lead of the second field-effect transistor, the second lead of the first field-effect transistor is electrically connected to the second lead of the second field-effect transistor, and the third lead of the first field-effect transistor is electrically connected to the third lead of the second field-effect transistor; and a first bipolar junction transistor having a first lead, a second lead and a third lead, wherein the first lead of the first bipolar junction transistor is electrically connected to the first lead of the first field-effect transistor.

Low-noise amplifier

Growing community of inventors

Mountain View, CA, United States of America

Alexander Viktorovich Garachtchenko