Institutt for Energiteknikk

Centre National De La Recherche Scientifique

UniversitÉde Strasbourg

Rec Solar Pte. Ltd.

Universitetet I Oslo

Instititt for Energiteknikk

Alexander Ulyashin

Smagul Karazhanov

Arve Holt

Erik Sauar

Andreas Bentzen

Pierre Bellanger

Bengt Svensson

Abdelilah Slaoui

Freddy Syvertsen

The invention relates to a method for manufacturing a semiconductor component comprising a thin layer of crystalline silicon on a substrate, comprising the steps of:

Crystallisation of amorphous silicon from a silicon-rich aluminium substrate

This invention relates to an electronic semiconductive component comprising at least one layer (2,3) of a p-type or n-type material, wherein the layer of a said p- or n-type material is constituted by a metal hydride having a chosen dopant. The invention also relates to methods for producing the component.

Semiconducting component

This invention relates to an electronic semiconductive component comprising at least one layer () of a p-type or n-type material, wherein the layer of a said p- or n-type material is constituted by a metal hydride having a chosen dopant. The invention also relates to methods for producing the component.

The surface recombination velocity of a silicon sample is reduced by deposition of a thin hydrogenated amorphous silicon or hydrogenated amorphous silicon carbide film, followed by deposition of a thin hydrogenated silicon nitride film. The surface recombination velocity is further decreased by a subsequent anneal. Silicon solar cell structures using this new method for efficient reduction of the surface recombination velocity is claimed.

Surface passivation of silicon based wafers

Growing community of inventors

Oslo, Norway

Alexander Ulyashin