Infineon Technologies Ag

Alexander Trueby

Hans-Peter Moll

Armin Kohlhase

Ulrich Zimmermann

Andreas Wich-Glasen

A method for the fabrication of an integrated semiconductor component, in which at least one isolation trench is formed, a first layer of a nonconductive material is applied by a nonconformal deposition method, and a second layer of a nonconductive material is applied by a conformal deposition method at least to the back surface of the semiconductor component.

Method for fabricating an integrated semiconductor component

A read-only memory cell array has vertical MOS transistors formed on trench walls, and is programmed with a programming mask which covers only the areas at which a transistor is not to be produced. As a result, the word lines can be formed with minimum grid spacing and the risk of short-circuiting between adjacent word lines is eliminated by buried ploy stringers.

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Dresden, Germany

Alexander Trueby