Mentor Graphics Corporation

Imec

Alexander Tritchkov

Emile Y Sahouria

Kyohei Sakajiri

Le Hong

Eric Henri Jan Hendrickx

A method for separating features in a target layout into different mask layouts for use in a photolithographic process. Features of a target layer are searched for features having a predefined shape. In one embodiment, portions of the feature having the predefined shape divided into two or more sub-features and at least one sub-feature are not considered when separating the features into two or more mask layouts. In another embodiment, features having a predefined shape are cut to form two or more sub-features and all features and sub-features are considered when separating the features of the target layout into the two or more mask layouts.

IC layout parsing for multiple masks

Separation directives for integrated circuit layout design data are formed based upon one or more printing feasibility analyses performed on the layout design data. At least one printing feasibility analysis is performed on layout design data to identify portions of the design that may not be correctly formed or 'printed' during a photolithographic process. The geometric element edges involved in a potential printing defect are then identified as edges to be formed using separate masks. Further, separation directives may be created to specifically designate the identified edges as edges to be formed using separate masks in a photolithographic manufacturing process.

Forming separation directives using a printing feasibility analysis

Various implementations of the invention provide for generation of a high transmission phase shift mask layout through inverse lithography techniques. In various implementations of the present invention, a set of mask data having a plurality of pixels is generated. The transmission value associated with each pixel may then be determined through an inverse lithography technique. With various implementations of the invention, the inverse lithography technique identifies an objective function, minimizes the objective function in relation to a simulation of the optical lithographic process, such that the transmission value, which is greater than 6%, may be determined.

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Hillsboro, OR, United States of America

Alexander Tritchkov