Osram Oled Gmbh

Osram Opto Semiconductors Gmbh

Meta Platforms Technologies, LLC

Alexander Tonkikh

Stefan Illek

Martin Rudolf Behringer

Tansen Varghese

Britta Göötz

Peter Stauss

Alvaro Gomez-Iglesias

Bruno Jentzsch

Andreas Plößl

Christophe Antoine Hurni

Andreas Rudolph

Stefan Heckelmann

Yong Tae Moon

LED devices and corresponding techniques for manufacturing LED devices are described. In some embodiments, an LED device includes a plurality of mesas, each mesa corresponding to a separate LED and including a layered semiconductor structure. The layered semiconductor structure includes an active region and a quantum barrier (QB) layer. The active region has a matrix of quantum well (QW) cells that are quantum mechanically isolated by the QB layer. In particular, the QB layer can include ridge-shaped structures that laterally separate adjacent QW cells. The matrix of QW cells can be arranged as a two-dimensional array. In some embodiments, the QW cells are epitaxially grown such that each QW cell is thicker along a central region and thinner along a peripheral region, with the peripheral region corresponding to where the QW cell meets a ridge-shaped structure of the QB layer.

Segmented and quantum mechanically isolated active regions in light emitting diodes

An optoelectronic semiconductor device comprises an active zone comprising sub-layers for forming a quantum well structure. Differences in energy levels of the quantum well structure are smaller in a central region of the optoelectronic semiconductor device than in an edge region of the optoelectronic semiconductor device. According to further embodiments, an optoelectronic semiconductor device comprises an active zone comprising a sub-layer which is suitable for forming a quantum well structure. In the active zone, quantum dot structures are formed in a central region of the optoelectronic semiconductor device. No quantum dot structures are formed in an edge region of the optoelectronic semiconductor device.

Optoelectronic semiconductor component and method for producing the same

A semiconductor laser is provided that includes a semiconductor layer sequence and electrical contact surfaces. The semiconductor layer sequence includes a waveguide with an active zone. Furthermore, the semiconductor layer sequence includes a first and a second cladding layer, between which the waveguide is located. At least one oblique facet is formed on the semiconductor layer sequence, which has an angle of 45&#xb0; to a resonator axis with a tolerance of at most 10&#xb0;. This facet forms a reflection surface towards the first cladding layer for laser radiation generated during operation. A maximum thickness of the first cladding layer is between 0.5 M/n and 10 M/n at least in a radiation passage region, wherein n is the average refractive index of the first cladding layer and M is the vacuum wavelength of maximum intensity of the laser radiation.

Semiconductor laser

A light-emitting semiconductor device () comprising a semiconductor layer sequence () based on a phosphide and/or arsenide compound semiconductor material system is specified, wherein&#x2014;the semiconductor layer sequence () comprises a light-emitting semiconductor layer (), which is embodied to emit light during operation of the semiconductor device (), between a first cladding layer () and a second cladding layer (), and at least a first semiconductor protection layer (), the first semiconductor protection layer () is arranged inside the first cladding layer (), wherein the first cladding layer is formed as an outer layer, or the first semiconductor protection layer is arranged as an outer layer directly on the first cladding layer () on a side remote from the light-emitting semiconductor layer (), and the first semiconductor protection layer () has a lower aluminum content than the first cladding layer.

Light-emitting semiconductor component

Provided is an optoelectronic semiconductor chip including a semiconductor layer sequence in which an active zone for generating radiation is located between a first semiconductor region and a second semiconductor region. A first electrical contact of the semiconductor layer sequence is applied to the first semiconductor region. A second electrical contact is applied to the second semiconductor region. The second electrical contact is located in a trench of the second semiconductor region. The trench is restricted to the second semiconductor region and ends at a distance from the active zone. A distance between a bottom of the trench and the active zone is at most 3 &#x3bc;m.

Optoelectronic semiconductor chip

A semiconductor chip may include a semiconductor body, a current spreading layer, and a contact structure. The semiconductor body may include a first semiconductor layer, a second semiconductor layer, and an intervening active layer, and a current spreading layer arranged in a vertical direction between the contact structure and the semiconductor body. The semiconductor boy has a plurality of internal step configured in a terrace-like manner where the contact structure may include a plurality of conductor tracks arranged with regard to the lateral orientations of the internal step in such a way that current spreading along the internal steps is promoted vis-&#xe0;-vis current spreading transversely with respect to the internal steps. A method for producing the semiconductor chip is also included.

Seminconductor chip having internal terrace-like steps and method for producing a semiconductor chip

A radiation-emitting semiconductor body includes a semiconductor layer sequence including an active region that generates radiation, an n-conducting semiconductor layer and a p-conducting semiconductor layer, wherein the active region is arranged between the n-conducting semiconductor layer and the p-conducting semiconductor layer and the p-conducting semiconductor layer includes a first doping region with a first dopant and a second doping region with a second dopant different from the first dopant, and the p-conducting semiconductor layer includes a further doping region doped with the first dopant and has a thickness of at most 2 nm.

Radiation-emitting semiconductor body and method of producing a semiconductor layer sequence

An epitaxial conversion element, a method for producing an epitaxial conversion element, a radiation emitting RGB unit and a method for producing a radiation emitting RGB unit are disclosed. In an embodiment an epitaxial conversion element includes a green converting epitaxial layer configured to convert electromagnetic radiation from a blue spectral range into electromagnetic radiation of a green spectral range and a red converting epitaxial layer configured to convert electromagnetic radiation from the blue spectral range into electromagnetic radiation of a red spectral range, wherein the green converting epitaxial layer and the red converting epitaxial layer are based on a phosphide compound semiconductor material, and wherein the green converting epitaxial layer and the red converting epitaxial layer are in different main extension planes which are parallel to each other.

Epitaxial conversion element, method for producing an epitaxial conversion element, radiation emitting RGB unit and method for producing a radiation emitting RGB unit

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Wenzenbach, Germany

Alexander Tonkikh