Applied Materials, Inc.

Alexander Tam

Sumedh Acharya

Anzhong Chang

Nyi O Myo

Lori D Washington

Sandeep Nijhawan

Ronald R Stevens

David P Bour

David H Quach

Brian Hayes Burrows

Kenric T Choi

Jacob Grayson

James D Felsch

Hua Chung

Hiroji Hanawa

Wei-Yung Hsu

Xinglong Chen

Donald J K Olgado

Jang-Gyoo Yang

Jacob W Smith

Sang Won Kang

Binh Hoa Tran

Kyawwin Jason Maung

Xizi Dong

Elisha Tam

Dmitry Lubomirsky

Tetsuya Ishikawa

Joseph Yudovsky

Saravjeet Singh

Son Truong Nguyen

Sean M Seutter

Lee Luo

Shulin Wang

David Palagashvili

Henry Ho

Steven Aihua Chen

Tien Fak Tan

Kirby Hane Floyd

Jie Su

Garry K Kwong

Anqing Cui

R Suryanarayanan Iyer

Xianzhi Tao

Shaofeng Chen

Sheshraj L Tulshibagwale

Steve Park

Deepak Doddabelavangala Srikantaiah

Rosemary Twist

Errol A C Sanchez

Implementations of the disclosure generally provide an improved pedestal heater for a processing chamber. The pedestal heater includes a temperature-controlled plate having a first surface and a second surface opposing the first surface. The temperature-controlled plate includes an inner zone comprising a first set of heating elements, an outer zone comprising a second set of heating elements, the outer zone surrounding the inner zone, and a continuous thermal choke disposed between the inner zone and the outer zone, and a substrate receiving plate having a first surface and a second surface opposing the first surface, the second surface of the substrate receiving plate is coupled to the first surface of the temperature-controlled plate. The continuous thermal choke enables a very small temperature gradient to be created and manipulated between the inner zone and the outer zone, allowing center-fast or edge-fast etching profile to achieve on a surface of the substrate.

Chamber apparatus for chemical etching of dielectric materials

Embodiments of the disclosure relate to a multi-plate faceplate having a first plate and a second plate. The first plate has a plurality of first plate openings. The second plate has a first surface, an opposed second surface and a plurality of second plate openings extending therethrough. The first surface is mechanically coupled to the first plate. A second plate opening has a conical portion configured to be fluidly coupled to a first plate opening and decreasing in cross-section in the depth direction thereof from the second surface. A surface of the conical portion is coated with a protective coating adjacent to the first and second surfaces. In another embodiment, the first plate has a protrusion extending therefrom into a recess formed inwardly of the first surface. The protrusion has a passage extending therethrough fluidly connected to the recess, which is fluidly connected to the second plate opening.

Multi-plate faceplate for a processing chamber

A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. The apparatus includes a showerhead assembly with separate inlets and manifolds for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. The showerhead includes a plurality of gas distribution devices disposed within a plurality of gas inlets for injecting one of the processing gases into and distributing it across a manifold for uniform delivery into the processing volume of the chamber. Each of the gas distribution devices preferably has a nozzle configured to evenly distribute the processing gas flowing therethrough while minimizing recirculation of the processing gas within the manifold. As a result, improved deposition uniformity is achieved on a plurality of substrates positioned in the processing volume of the processing chamber.

Showerhead assembly with gas injection distribution devices

Substrate support assemblies for a semiconductor processing apparatus are described. The assemblies may include a pedestal and a stem coupled with the pedestal. The pedestal may be configured to provide multiple regions having independently controlled temperatures. Each region may include a fluid channel to provide a substantially uniform temperature control within the region, by circulating a temperature controlled fluid that is received from and delivered to internal channels in the stem. The fluid channels may include multiple portions configured in a parallel-reverse flow arrangement. The pedestal may also include fluid purge channels that may be configured to provide thermal isolation between the regions of the pedestal.

Pedestal with multi-zone temperature control and multiple purge capabilities

Apparatus, reactors, and methods for heating substrates are disclosed. The apparatus comprises a stage comprising a body and a surface having an area to support a substrate, a shaft coupled to the stage, a first heating element disposed within a central region of the body of the stage, and at least second and third heating elements disposed within the body of the stage, the at least second and third heating elements each partially surrounding the first heating element and wherein the at least second and third heating elements are circumferentially adjacent to each other.

Multi-zone resistive heater

A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.

Multi-gas straight channel showerhead

Embodiments of the invention generally relate to apparatus and methods for cleaning chamber components using a cleaning plate. The cleaning plate is adapted to be positioned on a substrate support during a cleaning process, and includes a plurality of turbulence-inducing structures. The turbulence-inducing structures induce a turbulent flow of cleaning gas while the cleaning plate is rotated during a cleaning process. The cleaning plate increases the retention time of the cleaning gas near the showerhead during cleaning. Additionally, the cleaning plate reduces concentration gradients within the cleaning plate to provide a more effective clean. The method includes positioning a cleaning plate adjacent to a showerhead, and introducing cleaning gas to the space between the showerhead and the cleaning plate. A material deposited on the surface of the showerhead is then heated and vaporized in the presence of the cleaning gas, and then exhausted from the processing chamber.

Method and apparatus for inducing turbulent flow of a processing chamber cleaning gas

A method and apparatus that includes a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume is provided. The showerhead includes one or more cleaning gas conduits configured to deliver a cleaning gas directly into the processing volume of the chamber while by-passing the processing gas channels. The showerhead may include a plurality of metrology ports configured to deliver a cleaning gas directly into the processing volume of the chamber while by-passing the processing gas channels. As a result, the processing chamber components can be cleaned more efficiently and effectively than by introducing cleaning gas into the chamber only through the processing gas channels.

Multiple precursor showerhead with by-pass ports

A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, the apparatus a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. In one embodiment, the showerhead includes one or more cleaning gas conduits configured to deliver a cleaning gas directly into the processing volume of the chamber while by-passing the processing gas channels. In one embodiment, the showerhead includes a plurality of metrology ports configured to deliver a cleaning gas directly into the processing volume of the chamber while by-passing the processing gas channels. As a result, the processing chamber components can be cleaned more efficiently and effectively than by introducing cleaning gas into the chamber only through the processing gas channels.

Cleaning plate for inducing turbulent flow of a processing chamber cleaning glass

Lid assembly for a substrate processing chamber

A gaseous mixture is deposited onto a substrate surface using a showerhead. A first plenum of the showerhead has a plurality of channels fluidicly coupled with an interior of a processing chamber. A second plenum gas flows through a plurality of tubes extending from a second plenum of the showerhead through the channels into the interior of the processing chamber. The diameter of the tubes is smaller than the diameter of the channels such that a first plenum gas flows into the interior of the processing chamber through a space defined between the outer surface of the tubes and the surface of the channels. The length and diameter of the tubes determine the level of distribution and the molar ratio of the first gas and the second gas in the gaseous mixture that is deposited on the surface of the substrate.

System and method for depositing a gaseous mixture onto a substrate surface using a showerhead apparatus

Growing community of inventors

Union City, CA, United States of America

Alexander Tam