Infineon Technologies Ag

Alexander Susiti

Hans-Joachim Schulze

Markus Zundel

Reinhard Ploss

Werner Schustereder

Franz Josef Niedernostheide

Johannes Georg Laven

Stephan Voss

Alexander Breymesser

Helmut Oefner

Thomas Christian Neidhart

Thomas Neidhart

Shuhai Liu

A Magnetic Czochralski semiconductor wafer having opposing first and second sides arranged distant from one another in a first vertical direction is treated by implanting first particles into the semiconductor wafer via the second side to form crystal defects in the semiconductor wafer. The crystal defects have a maximum defect concentration at a first depth. The semiconductor wafer is heated in a first thermal process to form radiation induced donors. Implantation energy and dose are chosen such that the semiconductor wafer has, after the first thermal process, an n-doped semiconductor region arranged between the second side and first depth, and the n-doped semiconductor region has, in the first vertical direction, a local maximum of a net doping concentration between the first depth and second side and a local minimum of the net doping concentration between the first depth and first maximum.

Method for treating a semiconductor wafer

A semiconductor component includes a semiconductor body having a first side and a second side opposite the first side. In the semiconductor body, a dopant region is formed by a dopant composed of an oxygen complex. The dopant region extends over a section L having a length of at least 10 &#x3bc;m along a direction from the first side to the second side. The dopant region has an oxygen concentration in a range of 1&#xd7;10cmto 5&#xd7;10cmover the section L.

Semiconductor component having a dopant region formed by a dopant composed of an oxygen/vacancy complex

A method of manufacturing a semiconductor device includes forming a continuous silicate glass structure over a first surface of a semiconductor body, including a first part of the continuous glass structure over an active area of the semiconductor body and a second part of the continuous glass structure over an area of the semiconductor body outside of the active area. A first composition of dopants included in the first part of continuous glass structure differs from a second composition of dopants of the second part of the continuous glass structure.

Method of manufacturing a semiconductor device with a continuous silicate glass structure

Semiconductor device and method of manufacturing a semiconductor device with a continuous silicate glass structure

Semiconductor component comprising a dopant region in a semiconductor body and a method for producing a dopant region in a semiconductor body

A semiconductor device includes a semiconductor body including a first surface. The semiconductor device further includes a continuous silicate glass structure over the first surface. A first part of the continuous glass structure over an active area of the semiconductor body includes a first composition of dopants that differs from a second composition of dopants in a second part of the continuous glass structure over an area of the semiconductor body outside of the active area.

Semiconductor device including a silicate glass structure and method of manufacturing a semiconductor device

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Stadelbach, Austria

Alexander Susiti