William Marsh Rice University

Alexander Sinitskiy

James Mitchell Tour

Jun Yao

Yubao Li

Zvi Or-Bach

Lin Zhong

Mian Dong

Elvira Beitler

Electronic devices comprising a dielectric material, at least one carbon sheet, and two electrode terminals are described herein. The devices exhibit non-linear current-versus-voltage response over a voltage sweep range in various embodiments. Uses of the electronic devices as two-terminal memory devices, logic units, and sensors are disclosed. Processes for making the electronic devices are disclosed. Methods for using the electronic devices in analytical methods are disclosed.

Electronic switching, memory, and sensor devices from a discontinuous graphene and/or graphite carbon layer on dielectric materials

Vertically-stacked electronic devices having conductive carbon films are disclosed. The vertically-stacked devices exhibit non-linear current-versus-voltage response over a voltage sweep range in various embodiments. The vertically-stacked devices may be assembled into arrays where the vertically-stacked devices may be electrically addressed independently of one another. Uses of the vertically-stacked electronic devices and arrays as two-terminal memory devices, logic units, and sensors are disclosed. Crossbar arrays of vertically-stacked electronic devices having conductive carbon films and nanowire electrodes are disclosed.

Vertically-stacked electronic devices having conductive carbon films

Re-programmable antifuses and structures utilizing re-programmable antifuses are presented. Such structures include a configurable interconnect circuit having at least one re-programmable antifuse, wherein the at least one re-programmable antifuse is configured to be programmed to conduct by applying a first voltage across it and is configured to be re-programmed not to conduct by applying second voltage across it, wherein the second voltage is higher than the first voltage. Other embodiments of antifuses include an initializing step prior to programming.

Method for fabrication of a semiconductor element and structure thereof

Growing community of inventors

Ryazan, Russia

Alexander Sinitskiy