Advanced Technology Materials, Inc.

Alexander S Borovik

Thomas H Baum

Chongying Xu

Ziyun Wang

Ravi Kumar Laxman

Jeffrey F Roeder

Tianniu Chen

Steven M Bilodeau

Brian L Benac

Eliodor G Ghenciu

Michael B Korzenski

Scott L Battle

Daniel J Vestyck

James T Y Lin

Abigail Ebbing

Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes.

Copper (I) compounds useful as deposition precursors of copper thin films

A porogen material for forming a dielectric porous film. The porogen material may include a silicon based dielectric precursor and a silicon containing porogen. The porous film may have a substantially uniform dielectric constant value throughout. Methods of forming the porous film as well as semiconductor devices employing circuit features isolated by the porous film are also present.

Porogen material

An analytical technique for the accurate and precise measurement of trace water in chemical reagents, comprising the steps of combining a chemical reagent comprising &#x2266;5 ppm water, with hexafluoroacetone (HFA), to form a sample mixture comprising at least the chemical reagent and a water derivative of hexafluoroacetone; and measuring the concentration of the water derivative of hexafluoroacetone by gas chromatography.

Method for trace water analysis in cyclic siloxanes useful as precursors for low dielectric constant thin films

A siloxane dielectric precursor for use in a chemical vapor deposition (CVD) process, which has been dosed with a stabilizing agent(s) selected from free-radical inhibitors, end-capping agents and mixtures thereof. The stabilized siloxane dielectric precursor reduces the occurrence of premature deposition reactions occurring in the heated environment of the CVD delivery lines and process hardware.

Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films

A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-dielectric constant thin films having dielectric constants of less than 3.0, more preferably 2.8 to 2.0.

Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films

A method of synthesizing an aminosilane source reagent composition, by reacting an aminosilane precursor compound with an amine source reagent compound in a solvent medium comprising at least one activating solvent component, to yield an aminosilane source reagent composition having less than 1000 ppm halogen.

Silicon source reagent compositions, and method of making and using same for microelectronic device structure

An organosilicon precursor for vapor deposition, e.g., low pressure (&#x3c;100 Torr), plasma-enhanced chemical vapor deposition (PECVD) of a low k, high strength dielectric film, wherein the precursor includes at least one of:

Ethyleneoxide-silane and bridged silane precursors for forming low k films

Drying of patterned wafers is achieved in a manner effecting removal of water from the patterned wafers without collapse or deterioration of the pattern structures thereof. The drying is carried out in one aspect of the invention with a composition containing supercritical fluid, and at least one water-reactive agent that chemically reacts with water to form reaction product(s) more soluble in the supercritical fluid than water. Various methodologies are described for use of supercritical fluids to dry patterned wafers, which avoid the (low water solubility) deficiency of supercritical fluids such as supercritical CO.

Growing community of inventors

Hartford, CT, United States of America

Alexander S Borovik