Micron Technology Incorporated

Other

Alexander Ripp

Yakov Shor

Eyal Bar-sadeh

Dror Horvitz

Nuriel Amir

Semeon Altshuler

Valery Shumilin

Method and systems provide growth of polymer structures at a high rate in a selective manner. In various embodiments, the method or system can expose the growth site to a polymer source and growing a polymer tube at a rate of at least 80 micrometer per hour at the growth site. The method or system can provide selectivity by providing a growth site on a substrate by patterning a metal, such as copper, that provides a seed site for the polymer. Non-selected sites can be coated with a polymer growth inhibitor, such as polyimide or silicon nitride.

Selective polymer growth on a semiconductor substrate

High rate selective polymer growth on a substrate

In some embodiments, a damascene structure may be formed with metal lines separated by a dielectric layer. Portions of the dielectric layer may be ion implanted with carbon and/or inert species to lower selectively the dielectric constant, while leaving the bulk of the dielectric layer unaffected by the implant. As a result, suitably low dielectric constants can be achieved in damascene dielectric layers with sufficient mechanical strength.

Forming low dielectric constant dielectric materials

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Beer Sheva, Israel

Alexander Ripp