Day4 Energy Inc.

Alexander Osipov

Leonid B Rubin

Bram M Sadlik

George L Rubin

Andreas Schneider

A method of forming a selective emitter in a photovoltaic (PV) crystalline silicon semiconductor wafer involves forming a mask on a front side surface of the wafer to create masked and unmasked areas on the front side surface. A first silicon oxide layer is electrochemically formed at the unmasked areas of the front side surface such that the silicon oxide layer extends into an emitter of the wafer at least as far as a dead zone therein. The mask is removed and the first silicon oxide layer is etched back until substantially all of the first silicon oxide layer is removed. A second silicon oxide layer is then electrochemically formed on the front side surface such that the second silicon oxide layer has sufficient thickness to passivate the front side surface.

Crystalline silicon PV cell with selective emitter produced with low temperature precision etch back and passivation process

A solar cell apparatus and process for making and using same involving a semiconductor wafer having a front side surface and a metallized back side surface and a semiconductor p/n junction between the front side surface and the back side surface. At least one front side interruption is caused to extend along at least a portion of the front side surface and into the wafer to a depth sufficient to interrupt the semiconductor p/n junction to define a plurality of separate p/n junction sections within the wafer and to define separate front side surface portions associated with respective separate p/n junction sections. A back side interruption is caused to extend along a portion of the metallized back side surface, generally opposite the front side interruption, to define a plurality of separate metallized back side surface portions associated with respective p/n junction sections and in electrical contact with respective p/n junction sections.

Growing community of inventors

New Westminster, Canada

Alexander Osipov