Dsp Group Limited

Texas Instruments Corporation

Alexander Mostov

Sergey Anderson

Ron Pongratz

Eli Schwartz

Udi Suissa

Oren Eliezer

Yaron Hasson

Ilya Sima

Dirk Leipold

Sharon Betzalel

Avi Bauer

A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.

RF power amplifier splitter

A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 wireless local area network (WLAN), third generation (3G) and fourth generation (4G) cellular standards, BLUETOOTH&#x2122;, ZIGBEE&#x2122;, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard Complementary metal-oxide-semiconductor (CMOS) processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.

Linear row array integrated power combiner for RF power amplifiers

Radio frequency front end module circuit incorporating an efficient high linearity power amplifier

Efficient linear integrated power amplifier incorporating low and high power operating modes

CMOS based TX/RX switch

CMOS based RF antenna switch

A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, BLUETOOTH&#xae;, ZIGBEE&#xae;, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.

Two dimensional quad integrated power combiner for RF power amplifiers

An apparatus for and method of extending the dynamic range of a RF communications receiver. The invention provides a mechanism for controlling the gain of both the LNA and down conversion mixer in the front end portion of an RF receiver. Both the LNA and the mixer are adapted to have both low and high gain modes of operation. The control mechanism typically comprises a two bit gain control that places both the LNA and mixer in one of four operating gain mode states. The selection of the most appropriate operating gain mode state, is preferably determined in accordance with various metrics such as the received levels of the desired signal, levels of interference signals, bit error rate and receiver RSSI.

Apparatus for and method of optimizing the performance of a radio frequency receiver in the presence of interference

A novel integrated circuit incorporating a transmit/receive antenna switch capable of being integrated using silicon based RF CMOS semiconductor processes and a power amplifier on the same substrate. The switch circuit is constructed whereby the substrate (i.e. bulk) terminals of the FETs are left floating thus improving the isolation and reducing the insertion loss of the switch. Floating the substrate of the transistors eliminates most of the losses caused by leakage paths through parasitic capacitances internal to the transistor thus improving the isolation and reducing the insertion loss of the switch. Alternatively, the substrate can be connected to the source or to ground via a resistor of sufficiently high value to effectively float the substrate.

Integrated circuit incorporating RF antenna switch and power amplifier

A suspended printed inductor (SPI) connected in parallel to a suspended interdigital capacitor (SIC) so as to form a parallel resonant circuit that is nearly independent of variations in PCB etching tolerances. This combination of SPI and SIC functions to resonate at a center frequency and with similar parallel resonant circuits can be used to form RF filters having any desired order. Using the parallel resonant combination of SPI and SIC, a RF filter can be constructed whose electrical properties are nearly insensitive to variations in PCB parameters and etch processing. The sensitivity of the spiral suspended printed inductor in combination with the suspended printed interdigital capacitor to PCB parameters such as dielectric constant and PCB height is greatly reduced. Further, the parallel combination of suspended printed spiral inductor and suspended interdigital capacitor is nearly insensitive to PCB etching tolerances. SPIs and SICs are characterized by the absence of a ground plane. Low cost RF filters can be formed over any suitable substrate material, such as a dielectric substrate, with greatly reduced effects on filter performance due to the variations in PCB height, trace width and PCB material.

Growing community of inventors

Rishon Letzion, Israel

Alexander Mostov