Infineon Technologies Ag

R3t Gmbh Rapid Reactive Radicals Technology

Alexander Mattheus

Alexander Gschwandtner

Martin Kerber

Josef Mathuni

Heinz Steinhardt

Andreas Grassl

Barbara Fr&ouml;schle

Jürgen Sellmaier

Gudrun Innertsberger

Stephan Schneider

An apparatus is described for generating excited and/or ionized particles in a plasma with a generator for generating an electromagnetic wave and an excitation chamber with a plasma zone in which the excited and/or ionized particles are formed. At least one excitation chamber is arranged in an insulating material off-center relative to a ring-cylindrical outer conductor.

Apparatus for generating excited and/or ionized particles in a plasma and a method for generating ionized particles

Fluorine is deposited on a semiconductor substrate surface according to a novel process. A semiconductor substrate is placed in a reaction chamber and the substrate surface is wetted with water and/or alcohol. A compound containing fluorine is led to the substrate surface, so that a cleaned semiconductor surface covered with fluorine is produced, and the compound containing fluorine is removed from the reaction chamber. The cleaned semiconductor surface covered with fluorine is then wetted with a mixture containing at least 10% by volume of water and at least 10% by volume of alcohol, for producing a cleaned semiconductor surface covered with a predetermined amount of fluorine. The predetermined amount of fluorine is lower the higher a proportion of water in the mixture is chosen to be. Then, the water and the alcohol are removed from the semiconductor surface.

Method of producing a semiconductor surface covered with fluorine

Growing community of inventors

Taufkirchen, Germany

Alexander Mattheus