Robert Boschgmbh

Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Alexander Martin

Thomas Schwarz

Richard Fix

Oliver Wolst

Frank Singer

Jürgen Moosburger

Markus Widenmeyer

Norwin Von Malm

Karl Engl

Stefan Henneck

Nils Kaufmann

Martin Le-Huu

Dominik Eisert

Krister Bergenek

Stefan Lange

Andreas Ploessl

Andreas Plössl

Denis Kunz

Sonja Tragl

Mike Kunze

Frank Baumann

Ingo Daumiller

Dirk Liemersdorf

Florian Wahl

Petra Neff

Frederik Schrey

Dieter Elbe

An arrangement includes at least two modules for a video wall including light-emitting components arranged on a carrier, wherein a drive circuit that selectively drives the component at the carrier is provided for each component, row lines and column lines are provided, each drive circuit connects to a row line and a column line, each drive circuit connects to power supply lines, the carrier includes plated-through holes that guide the row lines and the column lines onto an underside of the carrier, the two modules are arranged on a further carrier, the further carrier includes at least one recess, an electrical connector is arranged in the recess, and the electrical connector connects column lines and/or row lines of the two modules to one another.

Modular module

A module for a video wall includes a plurality of light-emitting components; and a carrier including conduction regions, wherein the light-emitting components each include a top side including a top-side contact and an underside including an underside contact, the light-emitting components are configured to emit electromagnetic radiation via the top side, the underside contacts of the light-emitting components electrically conductively connect to the conduction regions, the top-side contacts electrically contact a conductive layer, the light-emitting components each include at least four light-emitting semiconductor chips, the light-emitting semiconductor chips within a light-emitting component interconnect in parallel with one another, the light-emitting semiconductor chips within a light-emitting component each electrically conductively connect to the top-side contacts and the underside contacts of the light-emitting component, a plurality of adjacent light-emitting components constitute a cluster, and the light-emitting semiconductor chips of the light-emitting components of a cluster includes an identical nominal wavelength.

Module for a video wall, and method of producing same

A module for a video wall is disclosed. In an embodiment a module includes a carrier, a plurality of components comprising at least one light-emitting structural element arranged on the carrier and an optical element, wherein the components are arranged at a prespecified lateral distance in relation to one another, wherein a retaining recess is formed between at least two components, wherein the retaining recess comprises at least two component recesses of two components which are arranged next to one another, wherein a retaining pin is fastened in the retaining recess, wherein the retaining pin is connected to the optical element, and wherein the optical element is configured to influence light irradiation onto the components and/or light emission from the components.

Module for a video wall with retaining pins

A module for a video wall includes a first light emitting chip of an image pixel connecting to a first power line by a first electrical terminal, the first light emitting chip connects to a third power line by a second electrical terminal, a second light emitting chip of the image pixel connects to a second power line by the first electrical terminal, the second light emitting chip of the image pixel connects to a fourth power line by the second electrical terminal, the first and/or the second power line are/is a surface metallization, including contact sections, a light emitting chip is arranged on a contact section, at least between contact sections of a first and of a second power line an insulation layer is provided on a carrier, the insulation layer includes openings above the contact sections, and the light emitting chips are arranged in the openings.

Module for a video wall

The invention relates to a component with at least one optoelectronic semiconductor chip, comprising: a connection substrate, which has an assembly surface and electric contact structures, and a plurality of structured semiconductor units, each of which has a plurality of monolithically connected pixels with a respective active layer that emits light during operation, wherein: the semiconductor units are arranged at a lateral distance to one another on the assembly surface, the distance between adjacent semiconductor units is at least 5 &#x3bc;m and maximally 55 &#x3bc;m, and the pixels can be controlled in an electrically separated manner. The invention also relates to a method for producing said component.

Light-emitting component and method for producing a light-emitting component

A radiation-emitting optoelectronic device, a method for using a radiation-emitting optoelectronic device and a method for making a radiation-emitting optoelectronic device are disclosed. In an embodiment, the device includes a semiconductor chip configured to emit a primary radiation and a conversion element including a conversion material which comprises Cr and/or Ni ions and a host material and which, during operation of the device, converts the primary radiation emitted by the semiconductor chip into a secondary radiation of a wavelength between 700 nm and 2000 nm, wherein the host material comprises EAGaO, AGaO, AEGaO, LnGaGeO, GaO, LnGaDOor MgDO, wherein EA=Mg, Ca, Sr and/or Ba, A=Li, Na, K and/or Rb, AE=Mg, Ca, Sr and/or Ba, Ln=La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu and D=Nb and/or Ta, and wherein y=0.9-1.9.

Radiation-emitting optoelectronic device

An optoelectronic arrangement includes an optoelectronic semiconductor chip, a wavelength-converting element and a detector component, wherein the optoelectronic arrangement is configured to emit light with a first peak wavelength and to emit light with a second peak wavelength, the first peak wavelength is in the visible spectral range and the second peak wavelength is in the non-visible spectral range or the first peak wavelength is in the non-visible spectral range and the second peak wavelength is in the visible spectral range, and the optoelectronic arrangement emits the light whose peak wavelength is in the non-visible spectral range into a target area, and the detector component is configured to detect light backscattered from the target area and the peak wavelength of which is in the non-visible spectral range.

Optoelectronic arrangement

A display device includes at least one semiconductor body, which has a semiconductor layer sequence, which has an active region provided for producing radiation and forms a plurality of pixels. The device also includes a driver circuit that has a plurality of switches, which are each provided for controlling at least one pixel. A first metallization layer and/or the second metallization layer are electroconductively connected to at least one of the pixels. The first metallization layer and the second metallization layer are arranged overlapping one another in such a manner that, in a plan view onto the display device, the driver circuit is covered with at least one of the metallization layers at every point which overlaps with one of the pixels or is arranged between two adjacent pixels.

Display device

A sensor element of a gas sensor for determining gas components in gas mixtures includes a field effect transistor and/or a diode which has a current flow which changes upon contact with a gas to be detected, and which is positioned in a manner protected, by a protective cap, from direct access by the gas mixture. The protective cap has a heating element, a glass former, and/or an oxidation catalyst.

Sensor element of a gas sensor and method for operating the same

A sensor for detecting a first component in a gas mixture is disclosed having a gas-sensitive electrode and a catalyst which is arranged on and/or spaced apart from the electrode in a porous carrier ceramic. The catalyst has the effect that a second component in the gas mixture is chemically altered such that the component contributes to no substantial change in the potential of the electrode.

Sensor for detecting a component of a gas mixture

An electronic component includes a printed conductor structure on a substrate, as well as a film which contacts the printed conductor structure. The film has a smaller layer thickness than the printed conductor. The printed conductor structure has a region which is covered by the film for the purpose of contacting.

Electronic component

An exhaust gas sensor device for detecting a concentration of at least one exhaust gas component in the exhaust gas line of an internal combustion engine is described, having at least one ChemFET for detecting the oxygen content of the exhaust gas. In addition, a corresponding engine control device and an engine control method are described.

Exhaust gas sensor device, engine control device and method

A gas-sensitive semiconductor device having a semiconductive channel () which is delimited by a first () and a second () channel electrode, and having a gate electrode () which is associated with the channel and which cooperates with the channel in such a way that a change in conductivity of the channel () occurs as a response to an action of a gas. The gate electrode () and/or a gate insulation layer () which insulates the gate electrode from the channel, and/or a gate stack layer () which may be provided between the gate electrode and the channel have/has two surface sections () which differ in their sensitivity to gases.

Gas-sensitive semiconductor device

A gas sensor for determining gas components in gas mixtures, e.g., for exhaust gases of internal combustion engines, includes a housing and a sensor element configured as a field effect transistor which has source, drain, and gate electrodes applied on a semiconductor substrate. A porous, catalytically active material is provided inside the housing of the gas sensor.

Field effect transistor gas sensor having a housing and porous catalytic material contained therein

An electronic component is described that includes a metallic layer on a substrate that is made of a semiconductor material and a diffusion barrier layer that is made of a material that has a small diffusion coefficient for the metal of the metallic layer which is formed between the metallic layer and the substrate.

Growing community of inventors

Wuppertal, Germany

Alexander Martin