Asml Netherlands B.v.

International Business Machines Corporation

Asml Holding N.v.

Asml Holdings N.v.

Alexander M Friz

Joseph Consolini

Keith Best

Michael A Guillorn

Chi-Chun Liu

Daniel Sanders

Markus Brink

Joy Cheng

Hsinyu Tsai

Henricus Wilhelmus Maria Van Buel

Gurpreet Singh

Melia Tjio

Cheng Gui

Rudy J Wojtecki

Ratnam Sooriyakumaran

Robert David Allen

Wu-Song S Huang

Damon B Farmer

Matthew Warren Copel

Phillip Joe Brock

Cheng-Qun Gui

Kuang-Jung Chen

Charles Thomas Rettner

Hoa D Truong

Sally Ann Swanson

Noel Arellano

Gregory S Doerk

Keith Frank Best

Embodiments are provided for fabrication of superconducting devices using area-selective deposition of a metal nitride. In some embodiments, a method can include providing a thermally treated carbon layer, and selectively depositing a metal nitride using the thermally treated carbon layer for formation of a superconducting device.

Area-selective deposition of metal nitride to fabricate devices

Hybrid pre-patterns were prepared for directed self-assembly of a given block copolymer capable of forming a lamellar domain pattern. The hybrid pre-patterns have top surfaces comprising independent elevated surfaces interspersed with adjacent recessed surfaces. The elevated surfaces are neutral wetting to the domains formed by self-assembly. Material below the elevated surfaces has greater etch-resistance than material below the recessed surfaces in a given etch process. Following other dimensional constraints of the hybrid pre-pattern described herein, a layer of the given block copolymer was formed on the hybrid pre-pattern. Self-assembly of the layer produced a lamellar domain pattern comprising self-aligned, unidirectional, perpendicularly oriented lamellae over the elevated surfaces, and parallel and/or perpendicularly oriented lamellae over recessed surfaces. The domain patterns displayed long range order along the major axis of the pre-pattern. The lamellar domain patterns are useful in forming transfer patterns comprising two-dimensional customized features.

Hybrid topographical and chemical pre-patterns for directed self-assembly of block copolymers

Coating compositions include a polymer including: wherein Ris a silicon containing moiety, Ris an acid stable lactone functionality, and Ris an acid labile lactone functionality; X, X, Xare independently H or CH; and m and o are non-zero positive integers and n is zero or a positive integer representing the number of repeat units; a photoacid generator; and a solvent. Also disclosed are methods for forming a pattern in the coating composition containing the same.

Silicon containing coating compositions and methods of use

A method is disclosed for one embodiment. An amount of photoresist is deposited upon a substrate, the amount of photoresist more than necessary to coat the substrate. The substrate is spun within a bowl such that an excess amount of photoresist is propelled off of the substrate to an interior surface of the bowl. A portion of the excess amount of photoresist is recovered and treated such that the recovered portion of the excess amount of photoresist is rendered usable.

Resist recovery method

The present invention relates to a device manufacturing method wherein a plurality of front side marks are manufactured on the front side of the substrate. These marks are used to locally align the substrate when exposing. After certain processing steps, the positions of the front side marks are measured and compared with respect to their original positions. The measured position changes of the front side marks, i.e. their behaviour, can then be analyzed. The original positions and actual positions are defined with respect to a nominal grid which is defined using global alignment marks which are positioned at the back side of the substrate. Because the global alignment marks are positioned at the back side, they are not affected by any processing step.

Device manufacturing method and a calibration substrate

In a method for measuring the bonding quality of bonded substrates, such as bonded SOI wafers, a plurality of marks are created at a first side of a top substrate after, or before, the bonding of the top substrate onto a bottom substrate. Then, the positions of the plurality of marks are measured using a metrology tool. Next, for each of the marks, a difference between a measured position and an expected position is calculated. These differences can be used to determine delamination between the top substrate and the bottom substrate. By displaying a vector field representing the differences, and by not showing vectors that exceed a certain threshold, the delamination areas can be made visible.

Method for measuring bonding quality of bonded substrates, metrology apparatus, and method of producing a device from a bonded substrate

A device manufacturing method capable of imaging structures on one side of a substrate aligned to markers on the other side, is presented herein. One embodiment of the present invention comprises providing a first substrate having first and second surfaces, patterning the first surface of the substrate with at least one reversed alignment marker, providing a protective layer over the alignment marker, and bonding the first surface of the first substrate to a second substrate. The embodiment further includes locally etching the first substrate as far as the protective layer to form a trench around the reversed alignment marker, and forming at least one patterned layer on the second surface using a lithographic projection apparatus having a front-to-backside alignment system while aligning the substrate to the alignment markers revealed in each trench.

Alternate side lithographic substrate imaging

Embodiments of the invention provide methods and apparatuses for efficient and cost-effective imaging of alignment marks. For one embodiment, alignment mark imaging is accomplished separately from, and independent of product imaging through use of a relatively low cost, low resolution, imaging tool. For one embodiment a wafer is exposed to low-resolution light source through a reticle having a number of alignment patterns corresponding to desired alignment marks. For one embodiment, global alignment marks are imaged on a backside of a wafer. Various embodiments of the invention obviate the need for a highly accurate stage and a high-resolution imaging device, and therefore reduce processing costs and processing time.

Methods and apparatuses for applying wafer-alignment marks

In a method of measurement according to one embodiment of the invention, a relative position of a temporary alignment mark on one side of a substrate and an alignment mark on the other side of the substrate is determined, and the temporary alignment mark is removed. Before removal of the temporary alignment mark, a relative position of that mark and another mark on the same side of the substrate may be determined. The temporary alignment mark may be formed in, e.g., an oxide layer.

Method of measurement, method for providing alignment marks, and device manufacturing method

While the alignment beam is focused on a mark on the substrate table, the substrate table is moved substantially perpendicularly to the alignment beam. If the image of the mark moves relative to a reference mark, then the substrate and the alignment beam are not perpendicular. The mark on the substrate table is aligned to a plurality of reference marks. At least two substrate marks are then aligned with a single reference mark. Errors due to the inclination of the alignment beam are eliminated from the expansion and rotation values calculated for the substrate.

Method of aligning a substrate, a computer program, a device manufacturing method and a device manufactured thereby

A method according to one embodiment of the invention may be used in determining relative positions of developed patterns on a substrate (exposed e.g. using the step mode). Such a method uses reference marks which are located within or even superimposed on device patterns. Also disclosed is a mask of a lithographic projection apparatus including reference marks that may be used in such a method.

Lithographic projection mask, device manufacturing method, and device manufactured thereby

To align between layers having a large Z separation, an alignment system which illuminates reference markers with normally incident radiation is used. The alignment system has an illumination system that is telecentric on the substrate side.

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San Jose, CA, United States of America

Alexander M Friz