Globalfoundries U.S. Inc.

Globalfoundries Singapore Pte. Ltd.

Alexander M Derrickson

Judson Robert Holt

Vibhor Jain

Jagar Singh

Hong Yu

Alexander Lee Martin

Haiting Wang

John Joseph Pekarik

Arkadiusz Malinowski

Mankyu Yang

Richard Francis Taylor, Iii

Alvin Jose Joseph

Venkatesh P Gopinath

Zhenyu Hu

Andreas Knorr

Shesh Mani Pandey

George Robert Mulfinger

Ryan W Sporer

Anupam Dutta

Rui Tze Toh

Oscar Restrepo

Steven M Shank

Peter Baars

Katherina E Babich

David C Pritchard

Ramsey M Hazbun

Cameron E Luce

Ali Razavieh

Edmund Kenneth Banghart

Hongru Ren

Halting Wang

Ketankumar Harishbhai Tailor

Zhixing Zhao

Sarah A McTaggart

Uppili S Raghunathan

Vvss Satyasuresh Choppalli

John Lemon

Megan Elizabeth Lydon-Nuhfer

V V S S Satyasuresh Choppalli

Structures that include bipolar junction transistors and methods of forming such structures. The structure comprises a substrate having a top surface, a trench isolation region in the substrate, and a base layer on the top surface of the substrate. The base layer extending across the trench isolation region. A first bipolar junction transistor includes a first collector in the substrate and a first emitter on a first portion of the first base layer. The first portion of the first base layer is positioned between the first collector and the first emitter. A second bipolar junction transistor includes a second collector in the substrate and a second emitter on a second portion of the first base layer. The second portion of the first base layer is positioned between the second collector and the second emitter.

Array arrangements of vertical bipolar junction transistors

Structures that include bipolar junction transistors and methods of forming such structures. The structure comprises a semiconductor layer, a substrate, and a dielectric layer disposed between the semiconductor layer and the substrate. The structure further comprises a first bipolar junction transistor including a first collector in the substrate, a first emitter, and a first base layer. The first base layer extends through the dielectric layer from the first emitter to the first collector. The structure further comprises a second bipolar junction transistor including a second collector in the substrate, a second emitter, and a second base layer. The second base layer extends through the dielectric layer from the second emitter to the second collector. The second base layer is connected to the first base layer by a section of the semiconductor layer to define a base line.

Bipolar junction transistor arrays

Structures that include resistive memory elements and methods of forming a structure that includes resistive memory elements. The structure comprises a bipolar junction transistor including a base, a first terminal having a first raised semiconductor layer over the base, and a second terminal having a second raised semiconductor layer over the base. The first raised semiconductor layer is spaced in a lateral direction from the second raised semiconductor layer. The structure further comprises a resistive memory element including a first electrode, a second electrode, and a switching layer between the first electrode and the second electrode. The first electrode of the resistive memory element is coupled to the first terminal of the bipolar junction transistor.

Resistive memory elements accessed by bipolar junction transistors

Disclosed are a forksheet semiconductor structure and a method of forming the structure. The structure can include a dielectric body with a first sidewall and a second sidewall opposite the first sidewall. The structure can include a first transistor, which incorporates first semiconductor nanosheet(s) positioned laterally immediately adjacent to the first sidewall of the dielectric body, and a second transistor, which incorporates second semiconductor nanosheet(s) positioned laterally immediately adjacent to the second sidewall. The first transistor and the second transistor can both be bipolar junction transistors (BJTs) (e.g., PNP-type BJTs, NPN-type BJTs or a PNP-type BJT and an NPN-type BJT). Alternatively, the first transistor can be a BJT (e.g., a PNP-type BJT or an NPN-type BJT) and the second transistor can be a field effect transistor (FET) (e.g., an N-type FET (NFET) or a P-type FET (PFET)).

Forksheet semiconductor structure including at least one bipolar junction transistor and method

The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes: an extrinsic base having at least one sidewall with a gradient concentration of semiconductor material; an emitter on a first side of the extrinsic base; and a collector on a second side of the extrinsic base.

Lateral bipolar transistors

The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes: an extrinsic base region; an emitter region on a first side of the extrinsic base region; a collector region on a second side of the extrinsic base region; and a gate structure comprising a gate oxide and a gate control in a same channel region as the extrinsic base region.

Lateral bipolar transistors with gate structure aligned to extrinsic base

The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor and methods of manufacture. The structure includes: a collector region; an extrinsic base comprising an emitter opening with an angled sidewall; an emitter within the emitter opening; and an intrinsic base between the emitter and the collector.

Bipolar transistor

The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor with gated collector and methods of manufacture. The structure includes: an extrinsic base region vertically over a semiconductor substrate and comprising asymmetrical sidewall spacers on opposing sidewalls of the extrinsic base region; a collector region on the semiconductor substrate and separated from the extrinsic base region by at least a first spacer of the asymmetrical sidewall spacers; and an emitter region on the semiconductor substrate and separated from the extrinsic base region by a second spacer of the asymmetrical sidewall spacers.

Lateral bipolar transistor with gated collector

A semiconductor device includes a first substrate, a second substrate bonded to the first substrate, and at least one thermally conductive structure that extends through a portion of the first substrate and a portion of the second substrate and is vertically aligned with an active region of the first substrate. The at least one thermally conductive structure is electrically insulated from electrically active structures in the semiconductor device. The thermally conductive structure acts as a heat sink to transfer heat from the active region.

Heat sink for face bonded semiconductor device

Structures for a heterojunction bipolar transistor and methods of forming a structure for a heterojunction bipolar transistor. The structure comprises an intrinsic base including a first semiconductor layer, a collector including a second semiconductor layer, and an emitter including a third semiconductor layer. The first semiconductor layer, which comprises silicon-germanium, includes a first portion and a second portion adjacent to the first portion. The second semiconductor layer includes a portion on the first portion of the first semiconductor layer, and the third semiconductor layer includes a portion on the second portion of the first semiconductor layer. The structure further comprises a dielectric spacer laterally between the portion of the second semiconductor layer and the portion of the third semiconductor layer.

Heterojunction bipolar transistors with terminals having a non-planar arrangement

Embodiments of the disclosure provide a bipolar transistor structure including a semiconductor fin on a substrate. The semiconductor fin has a first doping type, a length in a first direction, and a width in a second direction perpendicular to the first direction. A first emitter/collector (E/C) material is adjacent a first sidewall of the semiconductor fin along the width of the semiconductor fin. The first E/C material has a second doping type opposite the first doping type. A second E/C material is adjacent a second sidewall of the semiconductor fin along the width of the semiconductor fin. The second E/C material has the second doping type. A width of the first E/C material is different from a width of the second E/C material.

Bipolar transistor structure on semiconductor fin and methods to form same

The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. A structure includes: an intrinsic base comprising semiconductor material in a channel region of a semiconductor substrate; an extrinsic base vertically above the intrinsic base; a raised collector region on the semiconductor substrate and laterally connected to the intrinsic base; and a raised emitter region on the semiconductor substate and laterally connected to the intrinsic base.

Lateral bipolar transistor

Disclosed is a semiconductor structure including a lateral heterojunction bipolar transistor (HBT). The structure includes a substrate (e.g., a silicon substrate), an insulator layer on the substrate, and a semiconductor layer (e.g., a silicon germanium layer) on the insulator layer. The structure includes a lateral HBT with three terminals including a collector, an emitter, and a base, which is positioned laterally between the collector and the emitter and which can include a silicon germanium intrinsic base region for improved performance. Additionally, the collector and/or the emitter includes: a first region, which is epitaxially grown within a trench that extends through the semiconductor layer and the insulator layer to the substrate; and a second region, which is epitaxially grown on the first region. The connection(s) of the collector and/or the emitter to the substrate effectively form thermal exit path(s) and minimize self-heating. Also disclosed is a method for forming the structure.

Lateral heterojunction bipolar transistor with emitter and/or collector regrown from substrate and method

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Saratoga Springs, NY, United States of America

Alexander M Derrickson