Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Gmbh

Alexander Linkov

Matthias Sabathil

Thomas Schwarz

Ralph Wirth

Norwin Von Malm

Stefan Illek

Frank Singer

Peter Brick

Jürgen Moosburger

Britta Göötz

Thomas Zeiler

Georg Dirscherl

Michael Binder

Siegfried Herrmann

Lutz Höppel

Johannes Baur

Patrick Rode

Hans-Jürgen Lugauer

Markus Maute

Andreas Plöβl

Wolfgang Mönch

Christopher Koelper

Wolfgang Moench

Herbert Brunner

Markus Pindl

Andreas Ploessl

Lutz Hoeppel

Norbert Linder

Stephan Kaiser

Martin Strassburg

Jan Marfeld

Britta Goeoetz

Daniel Richter

Simeon Katz

Ales Markytan

Roland Schulz

Thomas Schlereth

Juergen Moosburger

Erik Heinemann

Tilman Eckert

Christopher Wiesmann

Daniel Leisen

Martin Straβburg

Christopher Kölper

Michael Kühnelt

Christina Keith

Christian Gärtner

Thomas Reeswinkel

Horst Varga

Jens Eberhard

Matthias Bruckschloegl

Ludwig Peyker

Holger Specht

Emilia Dinu

Manfred Scheubeck

Thomas Bleicher

Jia Ping Jackson Kua

Janick Ihringer

An optoelectronic semiconductor chip and a method for producing an optoelectronic semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence having a plurality of pixels, the semiconductor layer sequence comprising an active layer configured to generate electromagnetic radiation of a first wavelength range and a plurality of conversion elements, wherein each conversion element is configured to convert the radiation of the first wavelength range into radiation of a second wavelength range, wherein each pixel has a radiation exit surface and a conversion element is arranged on each radiation exit surface, and wherein each conversion element has a greater thickness in a central region than in a peripheral region.

Optoelectronic semiconductor chip, method for producing an optoelectronic semiconductor chip and headlight comprising an optoelectronic semiconductor chip

An optoelectronic component may have a semiconductor chip designed to emit electromagnetic radiation. The semiconductor chip may have a radiation exit surface, and a protective layer arranged over the radiation exit surface. The protective layer may include at least one first layer comprising an aluminum oxide and at least one second layer comprising a silicon oxide a silicon oxide, and at least one third layer comprising a titanium oxide. A current spreading layer may include one or more transparent conductive oxides arranged between the radiation exit surface and the protective layer.

Optoelectronic component

A component includes a light emitting semiconductor chip, wherein the semiconductor chip includes a layer arrangement including a plurality of layers, the p-conducting layer and the n-conducting layer adjoin one another in an active zone, a first electrical contact is configured on the p-conducting side of the layer arrangement at a first side of the semiconductor chip, a second electrical contact is configured on the n-conducting side of the layer arrangement at a second side of the semiconductor chip, the second side being situated opposite the first side of the semiconductor chip, the first side of the semiconductor chip transitions into the second side via an end side, the semiconductor chip is secured by the end side on a substrate, the substrate includes a first and second further electrical contact, and the further electrical contacts electrically conductively connect to the electrical contacts of the semiconductor chip.

Component with end-side mounted light emitting semiconductor chip

A method of manufacturing an optoelectronic component includes providing a carrier with an upper side; arranging an optoelectronic semiconductor chip above the upper side of the carrier; arranging a casting material over the upper side of the carrier, wherein the optoelectronic semiconductor chip is embedded in the casting material, and the casting material forms a cast surface; and removing a portion of the casting material at the cast surface, wherein a topography is generated at the cast surface, and the removal of a portion of the casting material at the cast surface takes place through laser interference structuring.

Method of producing an optoelectronic component

An optoelectronic component includes an optoelectronic semiconductor chip having a radiation-emitting face; and an optical element arranged over the radiation-emitting face, wherein the optical element includes a material in which light-scattering particles are embedded, and a concentration of the embedded light-scattering particles has a gradient forming an angle not equal to 90&#xb0; with the radiation emission face.

Optoelectronic component, optoelectronic arrangement, method of producing an optical element, and method of producing an optoelectronic component

A component includes a semiconductor chip, an envelope and a reflector, wherein the semiconductor chip has a front side, a rear side facing away from the front side and side faces, and the semiconductor chip is electrically contactable at least partially via its rear side, the reflector completely encloses the semiconductor chip in lateral directions, has a first subregion and a second subregion directly adjoining the first subregion, and the first subregion is spatially spaced from the semiconductor chip and the second subregion directly adjoins the semiconductor chip, the envelope covers the front side of the semiconductor chip completely and the side surfaces of the semiconductor chip at least partially so that the envelope has an interface facing the semiconductor chip and reproducing a contour of the semiconductor chip in regions, and in the component is free of a lead frame enclosed by a molded body.

Component having a reflector and method of producing components

An optoelectronic semiconductor component comprising a connection carrier with a mounting face and an electrically insulating base member. An optoelectronic semiconductor chip is arranged on the mounting face of the connection carrier. A radiation-transmissive body having four side faces is provided. The radiation-transmissive body surrounds the semiconductor chip in such a way that the radiation-transmissive body envelops outer faces of the optoelectronic semiconductor chip not facing the connection carrier in form-fitting manner. The radiation-transmissive body comprises at least one side face which extends at least in places at an angle of between 60&#xb0; and 70&#xb0; to the mounting face. The base member has a thickness which amounts to at most 250 &#x3bc;m.

Optoelectronic semiconductor component

A component includes a carrier and a semiconductor body arranged on the carrier, wherein the semiconductor body has an active layer arranged between the first and second semiconductor layers and is configured to generate, during operation of the component, an electromagnetic radiation that can be coupled out from the component through a first main surface, the first main surface of the component has an electrical contact layer configured to electrically contact a first semiconductor layer and in a plan view the carrier covers the first main surface in places, and in direct vicinity of the electrical contact layer the component includes a shielding structure configured to prevent electromagnetic radiation generated by the active layer from impinging onto the contact layer.

Component having improved coupling-out properties

An optoelectronic semiconductor component includes a light-emitting semiconductor body having a radiation side, a current expansion layer arranged on the radiation side of the semiconductor body and at least partially covers this side, wherein the current expansion layer includes an electrically-conductive material transparent to the light radiated by the semiconductor body, and particles of a further material, and an electrical contact arranged on a side of the current expansion layer facing away from the semiconductor body.

Optoelectronic semiconductor component and method of producing an optoelectronic semiconductor component

A method of producing a light-emitting arrangement includes providing a carrier including a top side, attaching a multitude of first conversion elements on the top side of the carrier, wherein the first conversion elements are arranged in a lateral direction spaced apart from one another, attaching an encapsulation on the top side of the carrier, wherein the encapsulation covers the carrier and the first conversion elements at least sectionally, removing the encapsulation in regions between the first conversion elements, and attaching optoelectronic semiconductor chips between the first conversion elements.

Method of producing a light-emitting arrangement

An optoelectronic semiconductor component and a method for producing the same are disclosed. In an embodiment the semiconductor component includes a semiconductor chip, which emits electromagnetic radiation of a first wavelength range from a radiation emission surface. The semiconductor component further includes a first conversion layer located on a lateral flank of the semiconductor chip, wherein the first conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, and a second conversion layer located on the radiation emission surface of the semiconductor chip, wherein the second conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of the second or of a third wavelength range. The first conversion layer is different from the second conversion layer.

Optoelectronic semiconductor component and method for producing same

An optical element is provided for beam shaping for radiation emitted by a radiation-emitting semiconductor chip. The optical element includes a radiation entrance face and a boundary surface different from the radiation entrance face with a first region and a second region. The first and second regions are arranged and embodied such that a first radiation portion of radiation entering the optical element through the radiation entrance face is reflected in the first region and after reflection in the first region is deflected in the second region towards a plane defined by the radiation entrance face.

Optical element and lighting device comprising an optical element

An optoelectronic component for mixing electromagnetic radiation having different wavelengths, for example, for the far field is disclosed. In an embodiment the optoelectronic component includes a carrier, at least one first semiconductor chip arranged on the carrier and having a first radiation exit surface for emitting electromagnetic radiation in a first spectral range and at least one second semiconductor chip arranged on the carrier and having a second radiation exit surface for emitting electromagnetic radiation in a second spectral range, wherein a diffusing layer is arranged on the first and second radiation exit surfaces of the semiconductor chips that face away from the carrier and wherein a reflecting layer is arranged between the first semiconductor chip and the second semiconductor chip, the first and second radiation exit surfaces being free from the reflecting layer at least in regions.

A light-emitting arrangement includes a radiation-emitting semiconductor chip that, during operation, emits primary radiation at least from a main emission surface, a first conversion element that absorbs part of the primary radiation and emits secondary radiation, and a deflection element that causes a direction change for part of the primary radiation, wherein the first conversion element is arranged in a lateral direction next to the radiation-emitting semiconductor chip, the deflection element guides part of the primary radiation onto the first conversion element, and the light-emitting arrangement, in operation, emits mixed light including the primary radiation and the secondary radiation.

Light-emitting arrangement and method of producing a light-emitting arrangement

The invention relates to a light-emitting semiconductor component, comprising&#x2014;a first semiconductor body (), which comprises an active zone () in which during the operation of the light-emitting semiconductor component electromagnetic radiation is generated, at least some of which leaves the first semiconductor body () through a radiation exit surface (), and&#x2014;a second semiconductor body (), which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a longer wavelength, wherein&#x2014;the first semiconductor body () and the second semiconductor body () are produced separately from each other,&#x2014;the second semiconductor body () is electrically inactive, and&#x2014;the second semiconductor body () is in direct contact with the radiation exit surface () and is attached there to the first semiconductor body () without connecting means.

Producing a light-emitting semiconductor component by connecting first and second semiconductor bodies

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Wuppertal, Germany

Alexander Linkov