Sgs-Thomson Microelectronics S.a.

Alexander Kalnitsky

Arnaud Lepert

A method for modifying the doping level of a doped silicon layer including the steps of coating the silicon layer with a silicide layer made of a refractory metal, and heating the interface region between the silicon and the silicide to a predetermined temperature. The method may be applied to the fabrication of an adjustable resistor or a MOS transistor having an adjustable threshold.

Method for modifying the doping level of a silicon layer

An overvoltage protection device, for inclusion within an integrated circuit, which comprises at least two conductive elements separated by a gas filled gap.

Method of fabricating an overvoltage protection device in integrated

Integrated overvoltage protection device having electrodes separated by

A semiconductor device is described, incorporating electron traps at the interface between a semiconductor substrate and a gate dielectric layer of an insulated gate field effect transistor, such device being capable of retaining charge in the electron traps for a certain time, allowing volatile memory circuits to be produced wherein each cell occupies only the area required for a single transistor.

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Grenoble, France

Alexander Kalnitsky