Robert Boschgmbh

Alexander Kaiser

Tobias Richter

Peter Sinn

Jan Homoth

Thomas Suenner

Juergen Zipprich

Moritz Schollbach

Christian Marc Lautensack

Christian Schiele

A semiconductor power module including first and second power transistors situated in parallel between first collector and first emitter strip conductors. A first connection surface of each of the power transistors is electroconductively connected to the first collector strip conductor, and a second connection surface of each of the power transistors is electroconductively connected to the first emitter strip conductor, so that a current flowing between the first collector strip conductor and the first emitter strip conductor is divided between the power transistors when the power transistors are each conductively connected via an applied control voltage. A first external power contact is directly contacted with the first collector strip conductor at a first contact area, a second external power contact is contacted with the first emitter strip conductor at a second contact area via a first connecting element, and the second contact area is positioned asymmetrically between the power transistors.

Semiconductor power module

The invention relates to a circuit arrangement (), comprising a control circuit () and a switch element () for switching between a first and a second switching state of the switch element (). The control circuit () is designed to provide a variable pre-control voltage dependent on the switching state of the switch element. The pre-control voltage is a voltage that is switched as the control voltage at the switch element () during one of the two switching states. The control circuit () is also designed to vary the pre-control voltage during each of the switching states.

Circuit arrangement for switching switch elements

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Schoerzingen, Germany

Alexander Kaiser