Applied Materials, Inc.

Alexander K Eidukonis

Hans-Joachim Ludwig Gossmann

Wei Zou

Stanislav S Todorov

Supakit Charnvanichborikarn

Wei Zhao

Dennis Rodier

Richard White

A method of operating a beamline ion implanter may include performing, in an ion implanter, a first implant procedure to implant a dopant of a first polarity into a given semiconductor substrate, and generating an estimated implant dose of the dopant of the first polarity based upon a set of filtered information, generated by the first implant procedure. The method may also include calculating an actual implant dose of the dopant of the first polarity using a predictive model based upon the estimated implant dose, and performing, in the ion implanter, an adjusted second implant procedure to implant a dopant of a second polarity into a select semiconductor substrate, based upon the actual implant dose.

Method and apparatus for controlled ion implantation

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Amesbury, MA, United States of America

Alexander K Eidukonis