Veeco Instruments Inc.

Emcore Corporation

Other

Sandia Corporation

Plansee Se

Alexander I Gurary

Vadim Boguslavskiy

Sandeep Krishnan

Keng Moy

Matthew King

Yuliy Rashkovsky

Mandar Deshpande

Chenghung Paul Chang

Steven Krommenhoek

Mikhail Belousov

William E Quinn

Eric Armour

Leo A Chin

Earl Marcelo

Bojan Mitrovic

Richard A Stall

Guray Tas

Scott Beherrell

Aniruddh Parekh

Ajit P Paranjpe

Craig Royden Nelson

Gary S Tompa

Joshua Mangum

Boris Volf

Jeffrey Ramer

Ameesh Patel

Aniruddha Bagchi

Paul Chang

John D Pollock

Piero Sferlazzo

Arno Plankensteiner

Robert Frank Karlicek, Jr

Richard A Comunale

Louise Smith Barriss

Robert White Milgate

Lukas Urban

Matthew J Van Doren

Roger P Fremgen

Ian Ferguson

Dane C Scott

Ian Kunsch

Scott Elman

Michael Spencer

Todd A Luse

Christian Feist

David Russell Voorhees

Ting Kai Li

Joseph Arthur Kraus

Jeffrey Scott Montgomery

William G Breiland

Paul Thomas Fabiano

Thomas Salagaj

Peter Zawadzki

Douglas A Collins

Eric A Armour

David Albert Crewe

Siddharth Patel

Steve Ting

Iii Robert White Milgate

A substrate reactor with centering pin for epitaxial deposition includes a vacuum chamber and a tube configured to rotate in the vacuum chamber around a tube geometrical center axis. A substrate carrier forming a pocket dimensioned for holding a substrate on a top surface includes an aperture that is centrally located on a bottom surface. The substrate carrier is positioned on and in contact with a top surface of the tube. A centering pin is positioned along a geometrical center axis of rotation of the substrate carrier. The centering pin has a first end positioned in the aperture on the bottom surface of the substrate carrier and a second end fixed inside the reactor so that the substrate carrier rotates around the geometrical center axis of the substrate carrier independent of the geometrical center axis of the tube.

Reactor with centering pin for epitaxial deposition

A chemical vapor deposition system for semiconductor wafer production is disclosed. The system includes a process cluster coupled to a first end of a transfer chamber. The process cluster is maintained at a pressure that is lower than atmospheric pressure. The process cluster is also configured to apply epitaxial layers on one or more wafers loaded onto a wafer carrier. The system also includes an automatic factory interface coupled to a second end of the transfer chamber. The automatic factory interface is maintained at atmospheric pressure. The system includes one or more wafer carrier cleaning modules coupled to the automatic factory interface and configured to clean one or more of the wafer carriers without removing the wafer carriers from the chemical vapor deposition system.

Deposition system with integrated carrier cleaning modules

Multi-filament heater assembly

A rotating disk reactor for chemical vapor deposition includes a vacuum chamber and a ferrofluid feedthrough comprising an upper and a lower ferrofluid seal that passes a motor shaft into the vacuum chamber. A motor is coupled to the motor shaft and is positioned in an atmospheric region between the upper and the lower ferrofluid seal. A turntable is positioned in the vacuum chamber and is coupled to the motor shaft so that the motor rotates the turntable at a desired rotation rate. A dielectric support is coupled to the turntable so that the turntable rotates the dielectric support when driven by the shaft. A substrate carrier is positioned on the dielectric support in the vacuum chamber for chemical vapor deposition processing. A heater is positioned proximate to the substrate carrier that controls the temperature of the substrate carrier to a desired temperature for chemical vapor deposition.

Rotating disk reactor with ferrofluid seal for chemical vapor deposition

Chemical vapor deposition wafer carrier with thermal cover

A self-centering wafer carrier system for a chemical vapor deposition (CVD) reactor includes a wafer carrier comprising an edge. The wafer carrier at least partially supports a wafer for CVD processing. A rotating tube comprises an edge that supports the wafer carrier during processing. An edge geometry of the wafer carrier and an edge geometry of the rotating tube being chosen to provide a coincident alignment of a central axis of the wafer carrier and a rotation axis of the rotating tube during process at a desired process temperature.

Self-centering wafer carrier system for chemical vapor deposition

Wafer carrier with a 33-pocket configuration

A wafer carrier for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition. The wafer carrier includes wafer retention pockets recessed in its body. Each pocket includes a floor surface and a peripheral wall surface surrounding the floor surface and defining a periphery of that pocket. Each pocket has a center situated along a corresponding wafer carrier radial axis. In each of the pockets, a set of bumpers is positioned primarily at a distal portion of the wafer retention pocket opposite the central axis so as to maintain a gap of at least a predefined size between the peripheral wall surface at the distal portion and an edge of a wafer to be placed in the wafer retention pocket.

Wafter carrier for chemical vapor deposition systems

A terminal for mechanical support of a heating element, includes a base device, a mounting device, the mounting device adapted to support the heating element, and a support device connecting the base device to the mounting device, the support device allowing displacement of the heating element about a radial axis and less than about 10% displacement of the heating element about a tangential and/or axial axis.

Terminal for mechanical support of a heating element

The invention relates generally to semiconductor fabrication technology and, more particularly, to chemical vapor deposition (CVD) processing and associated apparatus for addressing temperature non-uniformities on semiconductor wafer surfaces. Embodiments include a wafer carrier for use in a system for growing epitaxial layers on one or more wafers by CVD, the wafer carrier comprising a top plate and base plate which function coordinately to reduce temperature variability caused during CVD processing.

Wafer carrier having thermal cover for chemical vapor deposition systems

Wafer treatment process and apparatus is provided with a wafer carrier arranged to hold wafers and to inject a fill gas into gaps between the wafers and the wafer carrier. The apparatus is arranged to vary the composition, flow rate, or both of the fill gas so as to counteract undesired patterns of temperature non-uniformity of the wafers.

Processing methods and apparatus with temperature distribution control

Growing community of inventors

Bridgewater, NJ, United States of America

Alexander I Gurary