Infineon Technologies Ag

Alexander Herbrandt

Andre Arens

Andre Uhlemann

Alparslan Takkac

Andreas Grassmann

Wolfram Hable

Ottmar Geitner

Frank Winter

Ulrich Michael Georg Schwarzer

Regina Nottelmann

Alexander Schwarz

Katharina Teichmann

Michael Ebli

Barbara Eichinger

Marco Ludwig

Marian Sebastian Broll

Lothar Koenig

Philipp Bräutigam

Amir Al Kassou

Frank Broermann

Philipp Braeutigam

A method of increasing overall pin alignment accuracy for a power semiconductor module is provided. The power semiconductor module has a plurality of pins protruding from a housing of the power semiconductor module. The method includes: determining a positional deviation of each pin of the plurality of pins from a respective target position in a coordinate system; determining a positional offset for the power semiconductor module based on the positional deviations of the pins, the positional offset reducing overall misalignment between the plurality of pins and the target positions; and encoding the positional offset on an exposed surface of the power semiconductor module. Methods of mounting the power semiconductor module to a circuit board and/or heat sink are also provided.

Power semiconductor module and method of increasing pin alignment accuracy for power semiconductor modules

A method for producing a power semiconductor module arrangement includes: arranging at least one semiconductor substrate in a housing, each semiconductor substrate including a first metallization layer attached to a dielectric insulation layer, the housing including a through hole extending through a component of the housing; inserting a fastener into the through hole such that an upper portion of the fastener is not inserted into the through hole; arranging a printed circuit board on the housing; arranging the housing on a mounting surface, the mounting surface comprising a hole, wherein the housing is arranged on the mounting surface such that the through hole is aligned with the hole in the mounting surface; and exerting a force on the printed circuit board such that the force causes the fastener to be pressed into the hole in the mounting surface so as to secure the housing to the mounting surface.

Power semiconductor module arrangement and method for producing a power semiconductor module arrangement

An arrangement includes a housing and a printed circuit board (PCB) arranged vertically above the housing. The housing includes: at least one protrusion attached to sidewalls and arranged on an outside of the housing at a lower end with at least one first through hole provided in the protrusion; holding devices each arranged inside a first through hole and/or between the PCB and the first through hole; and fastening elements configured to attach the housing to a heat sink or base plate. Each holding device is configured to clamp a corresponding fastening element such that the fastening elements are secured in defined positions, and to align each fastening element with a different first through hole. The PCB includes second through holes each arranged vertically above and aligned with a different fastening element. A diameter of each second through hole is less than the largest diameter of the respective fastening element.

Housing for a power semiconductor module arrangement

A method of forming a semiconductor device includes providing a carrier comprising a die attach pad, providing a semiconductor die that includes a bond pad disposed on a main surface of the semiconductor die, and providing a metal interconnect element, arranging the semiconductor die on the die attach pad such that the bond pad faces away from the die attach pad, and welding the metal interconnect element to the bond pad, wherein the bond pad comprises first and second metal layers, wherein the second metal layer is disposed between the first metal layer and a semiconductor body of the semiconductor die, wherein a thickness of the first metal layer is greater than a thickness of the second metal layer, and wherein the first metal layer has a different metal composition as the second metal layer.

High density and durable semiconductor device interconnect

A method for producing a power semiconductor module arrangement includes: arranging a semiconductor substrate in a housing, the housing including a through hole extending through a component of the housing; inserting a pin or bolt into the through hole such that an upper end of the pin/bolt is not inserted into the through hole; arranging a printed circuit board on the housing; arranging the housing on a heat sink having a hole, the housing being arranged on the heat sink such that the through hole is aligned with the hole in the heat sink; and by way of a first pressing tool, exerting a force on a defined contact area of the printed circuit board and pressing the pin/bolt into the hole in the heat sink, wherein the defined contact area is arranged directly above the pin/bolt.

Power semiconductor module and a method for producing a power semiconductor module

An electronic assembly includes an electronic module and an electric part. The electronic module includes an electrically conductive press-fit terminal. The electrically conductive press-fit terminal has a press-fit section. The electric part has a contact hole. The press-fit section is inserted in the contact hole and plastically deformed therein, such that the press-fit section both mechanically and electrically contacts the electric part in the plastically deformed state. A corresponding method of assembly is also described.

Electronic module with an electrically conductive press-fit terminal having a press-fit section

An electronic assembly has an electronic module and an electric part. The electronic module has an electric terminal having a press-fit section. The press-fit section includes at least one of the following CuFeP; CuZr; CuCrZr; CuMg; CuCrTiSi; CuCrAgFeTiSi; and CuNiSiMg. The electric part has a contact hole. The electronic assembly includes a press-fit connection between the press-fit section and the electric part. In that press-fit connection, the press-fit section both mechanically and electrically contacts the electric part.

Method for electrically connecting an electronic module and electronic assembly

A semiconductor module includes a substrate having a metallized first side and a metallized second side opposing the metallized first side. A semiconductor die is attached to the metallized first side of the substrate. A plurality of cooling structures are welded to the metallized second side of the substrate. Each of the cooling structures includes a plurality of distinct weld beads disposed in a stacked arrangement extending away from the substrate. The substrate can be electrically conductive or insulating. Corresponding methods of manufacturing such semiconductor modules and substrates with such welded cooling structures are also provided.

Directly cooled substrates for semiconductor modules and corresponding manufacturing methods

In various embodiments, a substrate is provided. The substrate may include: a ceramic carrier having a first side and a second side opposite the first side; a first metal layer disposed over the first side of the ceramic carrier; a second metal layer disposed over the second side of the ceramic carrier; and a cooling structure formed into or over the second metal layer.

Substrate, chip arrangement, and method for manufacturing the same

According to an exemplary embodiment, a power module is provided which comprises a semiconductor chip, a bonding substrate comprising an electrically conductive sheet and an electric insulator sheet which is directly attached to the electrically conductive sheet and which is thermally coupled to the semiconductor chip, and an array of cooling structures directly attached to the electrically conductive sheet and configured for removing heat from the semiconductor chip when interacting with cooling fluid.

Power module with cooling structure on bonding substrate for cooling an attached semiconductor chip

A power module includes a substrate having an electrically insulative member with opposing first and second metallized sides and one or more semiconductor die attached to the first metallized side of the substrate. A plurality of thermally conductive structures are laterally spaced apart from one another and individually attached directly to the second metallized side of the substrate so that the plurality of thermally conductive structures extend outward from the second metallized side.

Growing community of inventors

Warstein, Germany

Alexander Herbrandt