Mapper Lithography IP B.v.

Asml Netherlands B.v.

Alexander Hendrik Vincent Van Veen

Marco Jan-Jaco Wieland

Willem Henk Urbanus

Pieter Kruit

Guido De Boer

Stijn Willem Herman Karel Steenbrink

Remco Jager

Teunis Van De Peut

Johan Joost Koning

Derk Ferdinand Walvoort

Henk Derks

Marco Jan Jaco Wieland

Hendrik Jan De Jong

Jerry Johannes Martinus Peijster

Bert Jan Kampherbeek

Tijs Frans Teepen

Yanxia Zhang

Christiaan Otten

Ralph Van Melle

Johannes Petrus Sprengers

Stijn Wilem Herman Karel Steenbrink

Alrik Van Den Brom

Gun Sari Mari Berglund

Joris Anne Henri Van Nieuwstadt

Sander Baltussen

Willem Maurits Weeda

Jan Jaco Wieland

A lens element of a charged particle system comprises an electrode having a central opening. The lens element is configured for functionally cooperating with an aperture array that is located directly adjacent said electrode, wherein the aperture array is configured for blocking 5 part of a charged particle beam passing through the central opening of said electrode. The electrode is configured to operate at a first electric potential and the aperture array is configured to operate at a second electric potential different from the first electric potential. The electrode and the aperture array together form an aberration correcting lens.

Aberration correction in charged particle system

The invention relates to an exposure apparatus and a method for projecting a charged particle beam onto a target. The exposure apparatus comprises a charged particle optical arrangement comprising a charged particle source for generating a charged particle beam and a charged particle blocking element and/or a current limiting element for blocking at least a part of a charged particle beam from a charged particle source. The charged particle blocking element and the current limiting element comprise a substantially flat substrate provided with an absorbing layer comprising Boron, Carbon or Beryllium. The substrate further preferably comprises one or more apertures for transmitting charged particles. The absorbing layer is arranged spaced apart from the at least one aperture.

Charged particle blocking element, exposure apparatus comprising such an element, and method for using such an exposure apparatus

The invention relates to charged particle beam generator comprising a charged particle source for generating a charged particle beam, a collimator system comprising a collimator structure with a plurality of collimator electrodes for collimating the charged particle beam, a beam source vacuum chamber comprising the charged particle source, and a generator vacuum chamber comprising the collimator structure and the beam source vacuum chamber within a vacuum, wherein the collimator system is positioned outside the beam source vacuum chamber. Each of the beam source vacuum chamber and the generator vacuum chamber may be provided with a vacuum pump.

Vacuum chamber arrangement for charged particle beam generator

The disclosure relates to an electron-optical module of an electron-optical apparatus. The electron-optical module comprises a vacuum chamber, a high voltage shielding arrangement located within the vacuum chamber, and an aperture array configured to form a plurality of beamlets from an electron beam and located within the high voltage shielding arrangement. Wherein the electron-optical module can be configured to be removable from the electron-optical apparatus.

A lens element of a charged particle system comprises an electrode having a central opening. The lens element is configured for functionally cooperating with an aperture array that is located directly adjacent said electrode, wherein the aperture array is configured for blocking part of a charged particle beam passing through the central opening of said electrode. The electrode is configured to operate at a first electric potential and the aperture array is configured to operate at a second electric potential different from the first electric potential. The electrode and the aperture array together form an aberration correcting lens.

The invention relates to a charged particle beam generator. The generator may comprise a high voltage shielding arrangement () for shielding components outside the shielding arrangement from high voltages within the shielding arrangement, and a vacuum pump () located outside the shielding arrangement for regulating a pressure of a space within the shielding arrangement. The generator may comprise a collimator system with a cooling arrangement (-) comprising cooling channels inside electrodes of the collimator system.

High voltage shielding and cooling in a charged particle beam generator

The invention relates to a charged particle lithography system for exposing a target. The system includes a charged particle beam generator for generating a charged particle beam; an aperture array () for forming a plurality of beamlets from the charged particle beam; and a beamlet projector () for projecting the beamlets onto a surface of the target. The charged particle beam generator includes a charged particle source () for generating a diverging charged particle beam; a collimator system () for refracting the diverging charged particle beam; and a cooling arrangement () for removing heat from the collimator system, the cooling arrangement comprising a body surrounding at least a portion of the collimator system.

Charged particle lithography system and beam generator

A charged particle lithography system for transferring a pattern onto the surface of a target, such as a wafer, comprising a charged particle source adapted for generating a diverging charged particle beam, a converging means for refracting said diverging charged particle beam, the converging means comprising a first electrode, and an aperture array element comprising a plurality of apertures, the aperture array element forming a second electrode, wherein the system is adapted for creating an electric field between the first electrode and the second electrode.

Lithography system and method of refracting

The invention relates to a charged-particle multi-beamlet lithography system. The system comprises a beam generator for generating a plurality of beamlets, a beamlet blanker array for patterning the plurality of beamlets, an optical fiber arrangement, and a projection system. The beamlet blanker array comprises a substrate provided with a first area comprising one or more modulators and a second area free of modulators. The beamlet blanker array comprises one or more light sensitive elements, electrically connected to the one or more modulators, and arranged to receive light beams carrying pattern data. The optical fiber arrangement comprises a plurality of optical fibers for guiding the light beams carrying pattern data towards the one or more light sensitive elements. The projection of the optical fiber arrangement onto a surface of the beamlet blanker array in a direction perpendicular to the surface falls entirely within the second area.

Modulation device and charged particle multi-beamlet lithography system using the same

A projection lens arrangement for a charged particle multi-beamlet system, the projection lens arrangement including one or more plates and one or more arrays of projection lenses. Each plate has an array of apertures formed in it, with projection lenses formed at the locations of the apertures. The arrays of projection lenses form an array of projection lens systems, each projection lens system comprising one or more of the projection lenses formed at corresponding points of the one or more arrays of projection lenses.

Projection lens arrangement

The invention relates to a charged-particle multi-beamlet lithography system for transferring a pattern onto the surface of a target. The system includes a beam generator, a beamlet blanker array, a shielding structure and a projection system. The beam generator is arranged for generating a plurality of charged particle beamlets. The beamlet blanker array is arranged for patterning the beamlets. The beamlet blanker array comprises a plurality of modulators and a plurality of light sensitive elements. The light sensitive elements are arranged to receive pattern data carrying light beams and are electrically connected to one or more modulators. The shielding structure is of an electrically conductive material for substantially shielding electric fields generated in proximity of the light sensitive elements from the modulators. The shielding structure is arranged to be set at a predetermined potential. The projection system is arranged for projecting the patterned beamlets onto the target surface.

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Rotterdam, Netherlands

Alexander Hendrik Vincent Van Veen