Siemens Aktiengesellschaft

Infineon Technologies Ag

R3t Gmbh Rapid Reactive Radicals Technology

Asm America, Inc.

Centrotherm Photovoltaics Ag

Ast Elektronik Gmbh

Muegge Gmbh

Hq-dielectrics Gmbh

Eeplasma Gmbh

Alexander Gschwandtner

Josef Mathuni

Zvonimir Gabric

Wilfried Lerch

Oswald Spindler

Heinz Steinhardt

Andreas Grassl

Alexander Mattheus

Ivo Johannes Raaijmakers

Martin Gutsche

Martin Kerber

Konrad Hieber

Michael Schrenk

Jürgen Holz

Helmuth Treichel

Michael Maurer

Jürgen Niess

Barbara Fr&ouml;schle

Wilhelm Kegel

Jürgen Sellmaier

Gudrun Innertsberger

Cornelius Alexander Van Der Jengd

Christopher Fran&ccedil;ois Lilian Pomar&egrave;de

Stephan Schneider

Jasper Von Tomkewitsch

Roland Sporer

Wilhelm Beckmann

A method for forming an oxide layer on a substrate is described, wherein a plasma is generated adjacent to at least one surface of the substrate by means of microwaves from a gas containing oxygen, wherein the microwaves are coupled into the gas by a magnetron via at least one microwave rod, which is arranged opposite to the substrate and comprises an outer conductor and an inner conductor. During the formation of the oxide layer, the mean microwave power density is set to P=0.8-10 W/cm, the plasma duration is set to t=0.1 to 600 s, the pressure is set to p=2.67-266.64 Pa (20 to 2000 mTorr) and a distance between substrate surface and microwave rod is set to d=5-120 mm. The above and potentially further process conditions are matched to each other such that the substrate is held at a temperature below 200&#xb0; C. and an oxide growth is induced on the surface of the substrate facing the plasma.

Method for forming a layer on a substrate at low temperatures

An apparatus is described for generating excited and/or ionized particles in a plasma with a generator for generating an electromagnetic wave and an excitation chamber with a plasma zone in which the excited and/or ionized particles are formed. At least one excitation chamber is arranged in an insulating material off-center relative to a ring-cylindrical outer conductor.

Apparatus for generating excited and/or ionized particles in a plasma and a method for generating ionized particles

A device to generate excited and/or ionized particles in plasma with a generator to generate an electromagnetic wave and at least one plasma zone, in which the excited and/or ionized particles are formed by the electromagnetic wave. The plasma zone is formed in an interior chamber of a conductor for the electromagnetic wave.

Device to generate excited/ionized particles in a plasma

Fluorine is deposited on a semiconductor substrate surface according to a novel process. A semiconductor substrate is placed in a reaction chamber and the substrate surface is wetted with water and/or alcohol. A compound containing fluorine is led to the substrate surface, so that a cleaned semiconductor surface covered with fluorine is produced, and the compound containing fluorine is removed from the reaction chamber. The cleaned semiconductor surface covered with fluorine is then wetted with a mixture containing at least 10% by volume of water and at least 10% by volume of alcohol, for producing a cleaned semiconductor surface covered with a predetermined amount of fluorine. The predetermined amount of fluorine is lower the higher a proportion of water in the mixture is chosen to be. Then, the water and the alcohol are removed from the semiconductor surface.

Method of producing a semiconductor surface covered with fluorine

The method according to the invention enables the roughness of an HSG surface to be substantially transferred to the surface of an electrode. The electrode consequently acquires a microstructured surface, the area of which can be increased by more than 25%, preferably by more than 50% and particularly preferably by more than 100%. An HSG layer is used to locally mask the electrode surface or the sacrificial layer. Subsequent structuring processes, such as for example wet-chemical and/or plasma-assisted etching processes, nitriding or oxidation processes, make it possible&mdash;working on the basis of micromasking effects&mdash;to significantly roughen the electrode surface and thereby to increase the electrode surface area.

Method for fabricating capacitor electrodes

A method is disclosed for depositing silicon with high deposition rates and good step coverage. The process is performed at high pressures, including close to atmospheric pressures, at temperatures of greater than about 650&deg; C. Silane and hydrogen are flowed over a substrate in a single-wafer chamber. Advantageously, the process maintains good step coverage and high deposition rates (e.g., greater that 50 nn/min) even when dopant gases are added to the process, resulting in commercially practicable rates of deposition for conductive silicon. Despite the high deposition rates, step coverage is sufficient to deposit polysilicon into extremely deep trenches and vias with aspect ratios as high as 40:1, filling such structures without forming voids or keyholes.

Method of depositing silicon with high step coverage

The method and system of the invention allow etching even relatively thick layers on the rear side of a semiconductor substrate where the front side is resist-free. An etching solution is sprayed in fine droplets onto the rear side of the semiconductor substrate. The semiconductor substrate may thereby be heated to a temperature .ltoreq.100.degree. C.

Method for etching a semiconductor substrate and etching system

A method and apparatus for measuring the emission coefficient of a semiconductor material for light of wavelength .lambda. having photon energy less than the semiconductor bandgap energy is introduced. The reflection coefficient for the light of wavelength .lambda. is measured while the semiconductor material is being irradiated with sufficient light having photon energy greater than the bandgap energy that the semiconductor material transmits little light of wavelength .lambda., and the emission coefficient is calculated from the measured reflection coefficient. The temperature of the semiconductor material can be calculated from the emission coefficient and the measured intensity of the thermally emitted radiation of wavelength .lambda..

Method and apparatus for determining emissivity of semiconductor material

In the ozone-activated deposition of insulating layers, different growth rates can be achieved on differently constituted surfaces. When the surfaces of the structured silicon substrates lying at different levels are differently constituted or, respectively, are intentionally varied such that the SiO.sub.2 insulating layer grows more slowly on the higher surfaces than on the more deeply disposed surfaces and when deposition is carried out until the surfaces of the rapidly growing and slowly growing layer regions form a step-free, planar level, a local and global planarization is achieved.

Method for locally and globally planarizing chemical vapor deposition of

For cleaning parasitic layers of silicon oxides or nitrides in a reaction chamber, an etching gas mixture is employed in which at least one fluoridated carbon, particularly CF.sub.4 and/or C.sub.2 F.sub.6, is the main constituent. Then, an ozone/oxygen mixture (O.sub.3 /O.sub.2) having optimally high ozone concentration is added to the reaction chamber. The etching gas mixture is excited in the reaction chamber by triggering the etching gas mixture to form a plasma, having extremely low power with an excitation frequency in the RF range. The etching gas mixture etches all surfaces in the reaction chambers free of residues with a high etching rate.

Method for cleaning reaction chambers by plasma etching

Growing community of inventors

München, Germany

Alexander Gschwandtner