University of Leeds

Cambridge University Technical Services Limited

Other

The University of Queensland

Infm Istituto Nazionale Per La Fisica Della Materia

Toshiba Research Europe Limited

Cambridge Enterprise Limited

Alexander Giles Davies

Edmund Harold Linfield

Christoph Walti

Christopher David Wood

Andrew James Shields

Michael J Robertson

Alessandro Tredicucci

David Graham Moodie

Donald Dominic Arnone

Craig Michael Ciesla

Rene Wirtz

Anton Peter Jacob Middelberg

Paul Ko Ferrigno

Stephen James Wilson

Michael Pepper

David Mark Whittaker

Xin Chen

Richard Andrew Hogg

Paul John Cannard

Fabio Beltram

Yao-Chun Shen

Ruedeger Koehler

Paul Dean

David Evans

Steven Johnson

Alban Josiah Smith

Dragan Indjin

Lianhe Li

Richard O'Rorke

John Cunningham

Thomas Taimre

Karl Bertling

Yah Leng Lim

Aleksandar D Rakic

Harvey Edward Beere

Aleksander D Rakic

Karl Bertung

Paul Koferrigno

Christoph WÄLTI

Stevens Johnson

A method and apparatus for manipulating polarizable dielectric particles. The method includes positioning a liquid containing the particles above a surface of a piezoelectric material (). The method also includes inducing a shear-horizontal surface acoustic wave in the piezoelectric material (), thereby to form a time-varying non-uniform evanescent electric field extending into the liquid. The method further includes using the time-varying non-uniform evanescent electric field to apply a force to at least some of the particles () by dielectrophoresis.

Method and apparatus for manipulating particles

A THz quantum cascade laser is used to investigate a target by directing a first beam of laser radiation from the laser at the target to thereby produce a second beam of laser radiation by interaction of the first beam with the target. Self-mixing of the first and second beams occurs within the laser and causes variations in a signal such as the operating voltage of the laser. An operating parameter of the laser that affects the interaction of the first beam with, the target is varied. The operating voltage is monitored and processed to determine phase and amplitude changes associated with material properties of the target. Consequently in one embodiment the invention provides for processing the variations in the signal to produce various images of the target.

Laser system for imaging and materials analysis

The disclosure relates to a method of detecting a structural change in a molecule that is attached to a surface that is electrically conductive, wherein the method includes monitoring the phase of the electrochemical impedance at the surface, and wherein a change in the phase indicates a change in the structure of the molecule. The disclosure also relates to arrays and methods for making arrays having molecules, such as polypeptides, attached to electrically conductive surfaces, such as electrodes.

Methods and devices for detecting structural changes in a molecule measuring electrochemical impedance

A method of removing at least one oxide from a surface of a body of semiconductor material is disclosed. The method includes arranging the body in a vacuum chamber and maintaining a temperature of the body in the vacuum chamber within a predetermined range, or substantially at a predetermined value, while exposing said surface to a flux of indium atoms. Corresponding methods of processing an oxidized surface of a body of semiconductor material to prepare the surface for epitaxial growth of at least one epitaxial layer or film over said surface, and methods of manufacturing a semiconductor device are also disclosed.

Oxide removal from semiconductor surfaces using a flux of indium atoms

A method of generating radiation comprises: manufacturing a structure comprising a substrate supporting a layer of InGaAs, InGaAsP, or InGaAlAs material doped with a dopant, said manufacturing comprising growing said layer such that said dopant is incorporated in said layer during growth of the layer; illuminating a portion of a surface of the structure with radiation having photon energies greater than or equal to a band gap of the doped InGaAs, InGaAsP, or InGaAlAs material so as to create electron-hole pairs in the layer of doped material; and accelerating the electrons and holes of said pairs with an electric field so as to generate radiation. In certain embodiments the dopant is Fe. Corresponding radiation detecting apparatus, spectroscopy systems, and antennas are described.

Generating and detecting radiation

The present invention provides a method of forming coatings of at least two different coating molecules on at least two electrodes, the method comprising: (a) providing an array of at least two individually-addressable electrodes, (b) allowing a layer of a masking molecule to adsorb onto all electrodes, (c) inducing electrochemical desorption of the masking molecule from at least one but not all electrodes to expose a first set of exposed electrodes, (d) allowing a first coating molecule to adsorb onto the first set of exposed electrodes, (e) exposing all electrodes to a masking molecule to allow adsorption of the masking molecule onto all electrodes, (f) inducing electrochemical desorption of masking molecule from a second set of electrodes to expose a second set of exposed electrodes, (g) allowing a second coating molecule to adsorb onto the second set of exposed electrodes.

Arrays of electrodes coated with molecules and their production

The invention relates to improved terahertz radiation sources and associated methods. A terahertz radiation source is described, comprising: an emitter () comprising a semiconductor material (); a pair of electrodes () adjacent a face of said semiconductor, said pair of electrodes defining a gap between said electrodes; a pulsed light source input for illuminating said semiconductor to excite photo-carriers in said semiconductor to generate terahertz radiation; and a radiation collector () to collect said terahertz radiation; and wherein said radiation collector is disposed on the same side of said semiconductor as said electrodes. A related method of providing terahertz radiation is also described.

Terahertz radiation sources and methods

A semiconductor laser comprises an active region () which, in response to a pumping energy applied thereto, can produce a stimulated emission of radiation with a central wavelength (&#x3bb;) in the far infrared region, and a confinement region () suitable for confining the radiation in the active region (), and comprising at least one interface () between adjacent layers that is capable of supporting surface plasmon modes generated by an interaction of the interface with the radiation. The confinement region () comprises a wave-guide layer () which is delimited on opposite sides by a first interface and by a second interface (). The guide layer () is doped in a manner such that the first and second interfaces () are capable of supporting the plasmon modes, respectively, and is of a thickness (d) such as to bring about the accumulation of the plasmon modes in proximity to the first and second interfaces (), outside the layer (), and substantially a suppression of the plasmon modes, inside the layer.

THz semiconductor laser incorporating a controlled plasmon confinement waveguide

An optical device for efficient radiation emission having a modulation region with phase matching means ( ) for enhancing the phase matching between two different frequency signals propagating in the optical modulation region ( ) in response to illumination by at least one incident beam ( ), the phase matching means ( ), having a spatial variation in its refractive index ( ) along the path of the incident radiation beam ( ). The device may be configured as a radiation source comprising a frequency conversion member (C ) for emitting a beam of radiation ( ) in response to irradiation by one or more input beams ( ), the emitted beam ( ) having a frequency different to that of the one or more input beams ( ), the one or more input beams ( ) all being produced within a lasing cavity (defined by M M M M and output coupler ( )) and said frequency conversion member (C ) being located within said lasing cavity. The invention also extends to an imaging system using the radiation source.

Optical device and imaging system

Growing community of inventors

Leeds, United Kingdom

Alexander Giles Davies