Tel Aviv University

Alexander Gerber

Amir Segal

Gil Markovich

Einat Tirosh

Gregory Kopnov

Leah Ben Gur

Systems and methods for passivation of III-V semiconductors to create heterogeneous structures based on such semiconductors, to the structures themselves, and to devices using passivated III-V semiconductors, such as metal oxide-semiconductor field effect transistors (MOSFET) and Hall effect sensors using III-V semiconductors.

Heterogeneous structures comprising III-V semiconductors and metal oxide dielectrics, and a method of fabrication thereof

A magnetic field sensor system comprises an electrically conducting film of ferromagnetic nanoparticles printed directly on a supporting structure, and electrically conducting contacts coupled to the film for injecting an electric current into the film and measuring a voltage generated across said film responsive to said injected current in a direction that is generally perpendicular to the current direction in the plane of the film.

Magnetic field sensing systems and methods

Apparatus includes a first Hall sensor having a first terminal, a second terminal, a third terminal and a fourth terminal and a second Hall sensor having a fifth terminal, a sixth terminal, a seventh terminal and an eighth terminal. A conductor connects the third terminal to the fifth terminal. A processor is configured to measure a first potential between the fourth terminal and the sixth terminal while transferring a first current from the first terminal to the seventh terminal via the conductor, to measure a second potential between the first terminal and the seventh terminal while transferring a second current from the fourth terminal to the sixth terminal via the conductor, and to determine a resultant voltage generated by the first and second Hall sensors in response to the first and second potentials.

Multi-bit magnetic memory cell

A device () for storing data includes at least first and second ferromagnetic films (F, F) and a sensing circuit (). The ferromagnetic films both have perpendicular magnetic anisotropy that is configured responsively to the stored data, and are connected so that an electrical current traverses the first and second ferromagnetic films and generates respective first and second extraordinary Hall voltages therein. The sensing circuit is configured to read out the stored data by measuring the first and second extraordinary Hall voltages.

A magnetic field sensor, including an insulating substrate and a conductive thin film deposited on the substrate. The thin film consists of a material having an extraordinary Hall coefficient, the thin film also has a resistivity and a film thickness no greater. than a threshold thickness at which the resistivity is substantially equal to 150% of a bulk resistivity of the material. The sensor also includes conductors coupled to the thin film for injecting a current into the film and measuring a voltage generated across the thin film responsive to the injected current. Devices having other types of thin films, including homogeneous and non-homogeneous films, the films having enhanced extraordinary Hall coefficients, are also provided.

Magnetic thin film sensor based on the extraordinary Hall effect

A magnetic field sensor, including an insulating substrate and a conductive thin film deposited on the substrate. The thin film consists of a material having an extraordinary Hall coefficient, the thin film also has a resistivity and a film thickness no greater than a threshold thickness at which the resistivity is substantially equal to 150% of a bulk resistivity of the material. The sensor also includes conductors coupled to the thin film for injecting a current into the film and measuring a voltage generated across the thin film responsive to the injected current. Devices having other types of thin films, including homogeneous and non-homogeneous films, the films having enhanced extraordinary Hall coefficients, are also provided.

Growing community of inventors

Tel Aviv, Israel

Alexander Gerber