Basf Se Corporation

Wayne State University

Alexander Georg Hufnagel

Charles H Winter

Kerstin Schierle-Arndt

Sabine Weiguny

Hagen Wilmer

Sinja Verena Klenk

Nilanka Weerathunga Sirikkathuge

Daniel Löffler

The present invention is in the field of processes for preparing inorganic metal- or semimetal-containing films. The process for preparing inorganic metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with a compound of general formula (I) or (II) wherein Z is NR, PR, OR, SR, CR, SiR, X is H, R' or NR′, wherein at least one X is H, n is 1 or 2, and R and R′ is an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Process for the generation of metal- or semimetal-containing films

Growing community of inventors

Ludwigshafen am Rhein, Germany

Alexander Georg Hufnagel