Siemens Aktiengesellschaft

Infineon Technologies Ag

Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Boehringer Ingelheim Vetmedica Gmbh

Alexander Frey

Joachim Hertkorn

Roland Thewes

Christian Paulus

Franz Hofmann

Werner Weber

Walter Gumbrecht

Manfred Stanzel

Till Schl&ouml;sser

Berthold Hahn

Harry Hedler

Stefan Barzen

Hans-Joerg Timme

Bernhard Goller

Meinrad Schienle

Peter Paulicka

Ingo Muri

Lorenzo Zini

Massimo Drago

Jan-Philipp Ahl

Matthias Peter

Tobias Meyer

Iris Moder

Alfred Sigl

Jürgen Off

Philipp Drechsel

Alvaro Gomez-Iglesias

Thomas Lehnhardt

Matthias Friedrich Herrmann

Ingrid Koslow

Christian Schmid

Lise Lahourcade

Daniel Sickert

Oliver Freudenberg

Philip Clissold Howell

Birgit Holzapfl

Harald Laux

Petra Schindler-Bauer

Marika Hirmer

Xiaojun Chen

Gerald Eckstein

Ingo Kühne

Thomas Kübel

Wilhelm Delchmann

Tobias Weindler

Jun Cheng Ooi

Sebastian HÜTTNER

Michael Zuber

A method of manufacturing a bonded substrate stack includes: providing a first substrate having a first hybrid interface layer, the first hybrid interface layer including a first insulator and a first metal; and providing a second substrate having a second hybrid interface layer, the second hybrid interface layer including a second insulator and a second metal. The hybrid interface layers are surface-activated to generate dangling bonds on the hybrid interface layers. The surface-activated hybrid interface layers are brought into contact, such that the dangling bonds of the first hybrid interface layer and the dangling bonds of the second hybrid interface layer bond together to form first insulator to second insulator bonds and first metal to second metal bonds.

Method of manufacturing a bonded substrate stack by surface activation

A semiconductor body and a method for producing a semiconductor body are disclosed. In an embodiment a semiconductor body includes a p-conducting region, wherein the p-conducting region has at least one barrier zone and a contact zone, wherein the barrier zone has a first magnesium concentration and a first aluminum concentration, wherein the contact zone has a second magnesium concentration and a second aluminum concentration, wherein the first aluminum concentration is greater than the second aluminum concentration, wherein the first magnesium concentration is at least ten times less than the second magnesium concentration, wherein the contact zone forms an outwardly exposed surface of the semiconductor body, and wherein the barrier zone adjoins the contact zone, and wherein the semiconductor body is based on a nitride compound semiconductor material.

Semiconductor body and method for producing a semiconductor body

A method of manufacturing a bonded substrate stack includes: providing a first substrate having a first hybrid interface layer, the first hybrid interface layer including a first insulator and a first metal; and providing a second substrate having a second hybrid interface layer, the second hybrid interface layer including a second insulator and a second metal. The hybrid interface layers are surface-activated by particle bombardment which is configured to remove atoms of the first hybrid interface layer and atoms of the second hybrid interface layer to generate dangling bonds on the hybrid interface layers. The surface-activated hybrid interface layers are brought into contact, such that the dangling bonds of the first hybrid interface layer and the dangling bonds of the second hybrid interface layer bond together to form first insulator to second insulator bonds and first metal to second metal bonds.

Method of manufacturing a bonded substrate stack

A semiconductor body main include a III-V compound semiconductor material having a p-conductive region doped with a p-dopant. The p-conductive region may include at least one first section, one second section, and one third section. The second section may be arranged between the first and third sections. The second section may directly adjoin the first and third sections. An indium concentration of at least one of the sections differs from an indium concentration of the other two sections.

An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment an optoelectronic semiconductor component includes a semiconductor body including a first region, an active region configured to generate electromagnetic radiation, a starting region, a plurality of funnel-shaped openings and a second region, wherein the starting region is arranged between the first region and the active region, wherein the active region is arranged between the starting region and the second region, wherein the funnel-shaped openings extend from the starting region through the active region as far as the second region, wherein the semiconductor body is based on a nitride compound semiconductor material, wherein the first region comprises n-doping, wherein the second region comprises p-doping, wherein the funnel-shaped openings are filled with a material of the second region, and wherein the funnel-shaped openings have a pre-determinable density, the density of the funnel-shaped openings being decoupled from a density of dislocations inside the first region.

Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

A method of producing light-emitting diode chips includes A) and C)-F) in order: A) providing a growth substrate, C) producing a structural layer, the structural layer including AlGaInN, where-in y1&#x2265;0.5, and a plurality of structural elements with a mean height of at least 50 nm so that a side of the structural layer facing away from the growth substrate is rough, D) producing a cover layer on the structural layer, the cover layer forming the structural layer true to shape and including AlGaInN, wherein x2&#x2265;0.6, E) producing a planarization layer on the cover layer, a side of the finished planarization layer is flat and the planarization layer includes AlGaInN, wherein x3+y3&#x2264;0.2, and F) growing a functional layer sequence that generates radiation on the planarization layer.

Method of producing light-emitting diode chips and light-emitting diode chip

A method of producing optoelectronic semiconductor chips includes growing a semiconductor layer sequence on a growth substrate; applying at least one metallization to a contact side of the semiconductor layer sequence, which contact side faces away from the growth substrate; attaching an intermediate carrier to the semiconductor layer sequence, wherein a sacrificial layer is attached between the intermediate carrier and the semiconductor layer sequence; removing the growth substrate from the semiconductor layer sequence; structuring the semiconductor layer sequence into individual chip regions; at least partially dissolving the sacrificial layer; and subsequently removing the intermediate carrier, wherein, in removing the intermediate carrier, part of the sacrificial layer is still present, removing the intermediate carrier includes mechanically breaking remaining regions of the sacrificial layer, and the sacrificial layer is completely removed after removing the intermediate carrier.

Method of producing optoelectronic semiconductor chips

A method for procuring a nitride compound semiconductor device is disclosed. In an embodiment the method includes growing a first nitride compound semiconductor layer onto a growth substrate, depositing a masking layer, growing a second nitride compound semiconductor layer onto the masking layer, growing a third nitride compound semiconductor layer onto the second nitride compound semiconductor layer such that the third nitride compound semiconductor layer has non-planar structures and growing a fourth nitride compound semiconductor layer onto the non-planar structures such that the fourth nitride compound semiconductor layer has an essentially planar surface. The method further includes growing a functional layer sequence of the nitride compound semiconductor device, connecting a side of the functional layer sequence located opposite to the growth substrate to a carrier and removing the growth substrate.

Method for producing a nitride compound semiconductor device

A device for detecting chemical or biochemical substances in fluids for use in an electrochemical camera. The device includes a first carrier having a sensor array with a plurality of electrochemical sensors. A second carrier includes a porous layer having at least one functional region, in which specifically binding capturing molecules are immobilized. The at least one functional region is arranged directly adjacent to at least one non-functionalized region. Assigned to the at least one functional region and the at least one non-functionalized region are several sensors of the sensor array, for use as the electrochemical camera.

Device similar to electrochemical camera and method for producing device

The method is designed for producing optoelectronic semiconductor chips and comprises the steps:

Method for producing optoelectronic semiconductor chips

An epitaxy substrate () for a nitride compound semiconductor material is specified, which has a nucleation layer () directly on a substrate () wherein the nucleation layer () has at least one first layer () composed of AlON with a column structure. A method for producing an epitaxy substrate and an optoelectronic semiconductor chip comprising an epitaxy substrate are furthermore specified.

Epitaxy substrate, method for producing an epitaxy substrate and optoelectronic semiconductor chip comprising an epitaxy substrate

A method is provided for producing an optoelectronic device, comprising the steps of providing a substrate, applying a nucleation layer on a surface of the substrate, applying and patterning a mask layer on the nucleation layer, growing a nitride semiconductor in a first growth step, wherein webs are laid which form a lateral lattice, wherein the webs have trapezoidal cross-sectional areas in places in the direction of growth, and laterally overgrowing the webs with a nitride semiconductor in a second growth step, to close spaces between the webs.

Optoelectronic device and method for producing an optoelectronic device

In at least one embodiment, the method is designed to produce an optoelectronic semiconductor chip. The method includes at least the following steps in the stated sequence: A) providing a growth substrate with a growth side, B) depositing at least one nucleation layer based on AlGaONon the growth side, C) depositing and structuring a masking layer, D) optionally growing a GaN-based seed layer in regions on the nucleation layer not covered by the masking layer, E) partially removing the nucleation layer and/or the seed layer in regions not covered by the masking layer or applying a second masking layer on the nucleation layer or on the seed layer in the regions not covered by the masking layer, and F) growing an AlInGaN-based semiconductor layer sequence with at least one active layer.

Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip

An arrangement and a method measures cell vitalities with a sensor array. The sensor array is formed on a surface of a semiconductor chip. The semiconductor chip has integrated circuits and an integrated circuit is associated with each sensor of the sensor array, for processing the measurement signals of the respective sensor. The integrated circuits are formed in the semiconductor chip spatially in each case below the associated sensor and neighboring sensors of the sensor array have a center-to-center in the range of micrometers. The pH and/or pOcan be measured in the environment of a living cell.

Arrangement and method using microsensors for measuring cell vitalities

A photonic crystal, which is a periodically arranged structure made of free-standing columns, has a base material of at least one metal or a metal alloy. Intermediate spaces between the columns allow passage of a gas to be analyzed. The photonic crystal has predefined imperfections, by which at least one resonator is formed, the resonant frequency of which is in a frequency range which is absorbed by a gas component to be detected. A heating unit heats at least some of the columns and at least one detector element extracts the energy present in the resonator in the heated state under the action of the gas to be analyzed. The device may have extremely small dimensions and very low energy consumption.

Device and system for selectively detecting gas components or concentrations of gas components in gas to be analyzed and method for operating such device

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Munich, Germany

Alexander Frey