Bar-ilan University

Technion Research & Development Foundation Ltd

Ben-gurion University of the Negev Research and Development Authority

Mellanox Technologies, Ltd.

Uti Limited Partnership

Bar-iian University

Alexander Fish

Adam Teman

Osnat Keren

Robert Giterman

Arkadiy Morgenshtein

Itamar Levi

Israel A Wagner

Itamar Levy

Orly Yadid-Pecht

Pascal Meinerzhagen

Yoav Weizman

Andreas Burg

Asaf Kaizerman

Sagi Fisher

Lidor Pergament

Moshe Avital

Omer Cohen

Elad Mentovich

Joseph Shor

Evgeny Artyomov

Yitzhak Schifmann

Matan Elkoni

Lior Atias

Yonatan Shoshan

Alexander Belenky

Maoz Vizentovski

Narkis Geuli

Netanel Shavit

Edison Ramiro Taco Lasso

Amir Shalom

Hadar Dagan

Inbal Stanger

Boris Maliatski

A technique to mitigate timing errors induced by power supply droops includes an inverter-based droop detector as well as Dual Mode Logic (DML) to achieve a droop-resist ant timing response. The droop detector is based on capacitor ratios and is thus less sensitive to Process/Voltage/Temperature (PVT) and to random offset than the prior art. The DML can alter its power/performance ratio based on the droop level input it receives from the detector, such that the critical timings are preserved.

Method for mitigation of droop timing errors including a droop detector and dual mode logic

A hardware memory includes at least one memory cell, peripheral circuitry and randomization circuitry. The memory cell(s) store data, which may be written to, read from and held in the hardware memory. The peripheral circuitry reads and writes data to the memory cell(s) and may perform other functions necessary for facilitating the data read, write and hold. The randomization circuitry randomizes operations performed by the peripheral circuitry to reduce a correlation between the data and the current consumed by the hardware memory.

Secured memory

A logic circuit includes a data signal input, a computational module, a direct timing modulator and an amplitude and non-direct timing modulator. The data signal input inputs data signals. The computational module includes multiple logic elements interconnected to perform a logic function. The direct timing modulator modulates a propagation time of the input data signals from the data signal input to the computational unit, in accordance with a first set of control signals. The amplitude and non-direct timing modulator modulates the processing time of data signals by the computational module and the amplitude of data signals propagating through the computational module, in accordance with a second set of control signals.

Information redistribution to reduce side channel leakage

A FinFET gain cell includes a write port, read port and storage node. The write port includes at least one write FinFET transistor and has write word-line (WWL) and write bit-line (WBL) inputs. The read port includes at least one FinFET read transistor and has a read word-line (RWL) input and a read bit-line (RBL) output. The storage node stores a data level written from said WBL. The storage nodes includes a single layer interconnect which connects the write port output diffusion connection to the read port input gate connection. The height of the single layer interconnect at the write port output diffusion connection is different from the height of the single layer interconnect at the read port input gate connection.

Fin-FET gain cells

A logic element includes a logic block, a supply voltage input, switchable power gates and a gate selector. The logic block implements a logic function on input data to obtain at least one output data signal. The switchable power gates transfer a supply voltage from the supply voltage input to the logic block in accordance with respective gate control signals. At least two of the power gates have different respective electrical properties. The gate selector switches on differing ones of the power gates in accordance with gate selection data.

Pseudo-asynchronous digital circuit design

A CDMR memory cell, includes a first bitcell which is used to store a current data level and a second bitcell which is used to store the complementary data level. When a read operation is performed, a comparator compares the data levels read from the two bitcells. If these two levels are not complementary, the comparator outputs an indicator. This indicator serves as an alert that a storage error has, or may have, occurred.

Complementary dual-modular redundancy memory cell

A randomization element includes a logic input for inputting a logic signal, a logic output for outputting the input logic signal at a delay and a randomization element. The randomization elements introduces the delay between said logic input and said logic output and operates selectably in static mode and in dynamic mode in accordance with a mode control signal. A logic circuit may be formed with randomization elements interspersed amongst the logic gates, to obtain protection against side channel attacks by inputting a selected control sequence into the randomization elements.

Randomized logic against side channel attacks

A logic element includes a logic block, a clock generator, a clock assigner and at least one sampling element. The logic block implements a logic function on input data to obtain a plurality output data signals. The output data signals are sampled by respective clock signals. The clock generator generates phase-shifted clock signals from a reference clock signal. The clock assigner assigns differing ones of the phase-shifted clock signals to respective output data signals. The sampling element(s) sample the output data signals in accordance with the respective assigned phase-shifted clock signals.

A method of designing a logic circuit with data-dependent delays is performed using an electronic design automation system. The logic circuit includes logic paths from logic inputs to at least one logic output. The method includes:

Data-dependent delay circuits

A high-density memory includes: a data write interface, a data read interface, an array of memory cells and level-shifting write drivers. The data write interface inputs data written to the memory. The data read interface outputs data read from the memory. The array of memory cells stores data input at the data write interface and outputs stored data to the data read interface. Each of the memory cells includes at least one low threshold voltage (LVT) read transistor and at least one respective regular threshold voltage (RVT) transistor, so as to obtain high-speed read operations. The level-shifting write drivers supply shifted write wordline voltages to the array, so as to obtain high-speed write operations.

High-density memory macro

An RMTL gate includes at least two logic blocks, where at least one of the logic blocks operates in multiple modes. The respective logic block mode(s) are selected by a topology selector which applies mode control signals to the logic blocks in order to obtain a selected topology for logic circuit operation. RMTL logic gates may be cascaded and/or interconnected to form an RMTL logic circuit with multiple logic gates which may operate with dynamically varying topologies. Use of random, semi-random or specified control sequences may protect the logic circuit against security attacks.

Multi-topology logic gates

A gain cell includes a write bit line input, a read bit line output, a write trigger input and a read trigger input. The write element writes a data level from the write bit line input to the gain cell when triggered by the write trigger input. The retention element buffers between an internal buffer node and an internal storage node during data retention. The retention element also connects or disconnects the buffer node to a first constant voltage according to the data level being retained in the gain cell. The read element decouples the storage node from the read bit line output during data read. The read element also connects and disconnects the read bit line output to a second constant voltage according to the data level being read from the gain cell.

Transistor gain cell with feedback

A gain cell includes a write bit line input, a read bit line output, a write trigger input and a read trigger input. The gain cell also includes a write transistor, retention element and read transistor. Each of the transistors includes a respective first diffusion connection, gate connection and second diffusion connection. The write transistor first diffusion connection is connected to the write bit line input and the write transistor gate connection is connected to the write trigger input. The read transistor first diffusion connection being connected to the read bit line output and the second diffusion connection is connected to the read trigger input. The retention element buffers between write transistor and the read transistor during data retention. The retention element also connects or disconnects a write transistor diffusion connection to/from a constant voltage in accordance with a retained data level at the read transistor gate connection.

A method for designing a dual-mode logic circuit which is selectably operational in static and dynamic modes is performed as follows. A basis library with a DML inverter and dual-mode logic (DML) bicells is provided. Each DML bicell includes a type-A DML logic gate with a clock input and a type-B DML logic gate with an inverted clock input. A pseudo-static library is formed from the basis library by modifying each bicell of the basis library and specifying at least one dynamic timing parameter. A dynamic library is formed from the basis library by specifying dynamic timing parameters for the basis library DML inverter and bicells. Logic behavior of the required logic circuit is defined. An initial logic circuit design synthesized from the pseudo-static library and the defined logic behavior. Finally, a dynamic circuit design is formed by replacing modified bicells with corresponding bicells from the dynamic library.

Dual mode logic circuits

A dual-mode logic gate, for selectable operation in either of static and dynamic modes, includes: a static gate which includes at least one logic input and a logic output; a mode selector, configured for outputting a turn-off signal to select static mode operation and for outputting a dynamic clock signal to select dynamic mode operation; and a switching element associated with the mode selector static gate, comprising a first input connected to a constant voltage, a second input for inputting the mode selection signal from the mode selector, and an output connected to a logic output of the static gate. The switching elements switches the logic gate operation from static to dynamic mode, by applying the appropriate signal to the switching element.

Growing community of inventors

Tel-Mond, Israel

Alexander Fish