Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Opto Semiconductor Gmbh

Ams-osram International Gmbh

Alexander F Pfeuffer

Norwin Von Malm

Dominik Scholz

Isabel Otto

Korbinian Perzlmaier

Martin Mandl

Martin Rudolf Behringer

Frank Singer

Kerstin Neveling

Berthold Hahn

Siegfried Herrmann

Tansen Varghese

Patrick Rode

Britta Göötz

Tobias Meyer

Andreas Plößl

Erwin Lang

Lutz Höppel

Marc Philippens

Martin Strassburg

Andreas Biebersdorf

Petrus Sundgren

Sebastian Wittmann

Peter Stauss

Jens Mueller

Bruno Jentzsch

Christopher Kölper

Christian Mueller

Julia Stolz

Ruth Boss

Thomas Schwarz

Lutz Hoeppel

Britta Goeoetz

Hubert Halbritter

Georg Bogner

Stefan Illek

Stefan Grötsch

Ion Stoll

Hans-Jürgen Lugauer

Christoph Klemp

Andreas Plössl

Andreas Waag

Sophia Huppmann

Martin Straβburg

Christopher Koelper

Jens Müller

Philipp Kreuter

Christoph Schwarzmaier

Tilman Rügheimer

Mohammad Tollabi Mazraehno

Andrea Winnerl

Johannes Ledig

Richard Neumann

Mariel Grace Jama

Tobias Berthold

Mikko Peraelae

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

U-LED, U-LED device, display and method for the same

μ-LED, μ-LED device, display for augmented reality or lighting applications

An optoelectronic semiconductor component includes a layer stack, a first and second contact means, an electrically conductive edge layer, and a first dielectric layer. The layer stack includes a side surface and a first and a second main surface. The first and second contact means may be arranged at the first and second main surfaces, respectively. Said contact means may electrically contact a first and second semiconductor region of the layer stack, respectively. The second contact means may be radiation-transmissive. The electrically conductive edge layer may be arranged on the layer stack and extend from the second contact means over the side surface as far as the first main surface. The first dielectric layer may be arranged between the edge layer and the layer stack. The second main surface may not be covered by the first dielectric layer.

Optoelectronic semiconductor component and production method

An optoelectronic semiconductor component includes a primary light source including a carrier and a semiconductor layer sequence mounted thereon and configured to generate primary light, and at least one conversion unit of at least one semiconductor material adapted to convert the primary light into at least one secondary light, wherein the semiconductor layer sequence and the converter unit are separate elements, the semiconductor layer sequence includes a plurality of pixels, the pixels are configured to be controlled electrically independently of each other, the carrier includes a plurality of control units configured to drive the pixels, all pixels of a first group are free of a conversion unit and are configured to emit the primary light, all pixels of a second group of pixels include exactly one conversion unit each and are configured to emit the at least one secondary light.

Method of producing optoelectronic semiconductor components and an optoelectronic semiconductor component

In an embodiment a method includes providing a donor substrate comprising a sacrificial layer, a connecting layer, and a plurality of semiconductor components arranged on the sacrificial layer, the connecting layer at least locally passing fully through the sacrificial layer so that each semiconductor component is at least locally in direct contact with the connecting layer, performing a selection method for identifying defective semiconductor components, selectively applying a cover layer onto a defective semiconductor component, at least one semiconductor component arranged directly adjacent to the defective semiconductor component and an intermediate region located between these semiconductor components, selectively etching the sacrificial layer, wherein the cover layer reduces or avoids etching the sacrificial layer in the intermediate region and removing the semiconductor components from the donor substrate, the defective semiconductor component remaining on the donor substrate.

Method for selecting semiconductor components

In an embodiment a method for producing a component having a carrier and at least one component part electrically conductively connected to the carrier and mechanically fixed to the carrier by an electrically insulating bonding layer includes providing the carrier having a connection layer, wherein the bonding layer is disposed on the carrier and has at least one opening, wherein a connection surface of the connection layer is exposed, and wherein the bonding layer projects vertically beyond the exposed connection surface or vice versa, applying the component part having a contact layer on the carrier in such that, in top view of the carrier, an exposed contact surface of the contact layer covers the opening and the connection surface located therein, wherein the exposed contact surface is spaced apart from the exposed connection surface by a vertical distance and reducing the vertical distance by changing a volume of the bonding layer such that the exposed contact surface and the exposed connection surface are brought together, such that they are directly adjacent to each other and such that a direct electrical contact is formed between the contact layer and the connection layer.

Method for producing a component, and component

A support structure for receiving planar microchips, comprising a planar support substrate and at least two receiving elements. The receiving elements are connected to the carrier substrate and configured in such a way that they detachably hold a flat microchip between the at least two receiving elements in such a way that the microchip can be moved out with a defined minimum force transversely to a support structure plane.

Multi-chip carrier structure

μ-LED, μ-LED device, display and method for the same

In an embodiment an adhesive transfer stamp for transferring semiconductor chips includes a volume region including an electrically insulating material, at least one adhesive surface configured to receive a semiconductor chip and an electrically conductive element configured to electrically conductively connected to a ground conductor during operation and to dissipate electrical charges from the semiconductor chip to the ground conductor, wherein the volume region is embodied as a solid body, and wherein the volume region has at least one stepped structure.

Adhesive transfer stamp and method for transferring a semiconductor chip using an adhesive transfer stamp

In an embodiment a component assembly includes a plurality of components, a carrier, wherein the components are secured on the carrier by a connecting layer, wherein, for each component, the connecting layer forms at least one supporting structure at which the connecting layer is adjacent to the component, and a sacrificial layer arranged regionally between the components and the connecting layer, wherein one portion of the components is assigned to a first group, wherein a further portion of the components is assigned to a second group, and wherein the components of the first group are different than the components of the second group in respect of a coverage with the sacrificial layer.

Interbonded components, method for detaching components from interbonded components, and method for producing interbonded components

A component having a carrier and at least one main body where the main body may include a semiconductor body and the carrier may have a mounting surface for arranging the mounting body thereon. A stopping structure may be arranged on the mounting surface and may project vertically beyond the mounting surface. The main body may be directly adjacent to the stopping structure such that the position of the main body is bounded along at least one lateral direction by the stopping structure.

Component and method for producing a component

An optoelectronic semiconductor element may include an optoelectronic semiconductor chip. The optoelectronic semiconductor chip may include a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a first contact element connected to the first semiconductor layer in an electrically conductive manner, and a second contact element connected to the second semiconductor layer in an electrically conductive manner. The first semiconductor layer and the second semiconductor layer are arranged one above the other to form a layer stack. The first semiconductor layer to where the second semiconductor layer is exposed. The first contact element is arranged over the first semiconductor layer, and the second contact element is arranged over the first semiconductor layer.

Optoelectronic semiconductor component comprising a first and second contact element, and method for producing the optoelectronic semiconductor component

In an embodiment, an optoelectronic semiconductor component includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, wherein a respective semiconductor material of the first and second semiconductor layers are each a compound semiconductor material including a first, a second and a third composition element, and a second contact region configured to electrically contact the second semiconductor layer, wherein the first semiconductor layer is patterned and arranged over the second semiconductor layer, wherein the second contact region is arranged between patterned regions of the first semiconductor layer, wherein the second contact region comprises a second metallic contact layer and a semiconductor contact layer between the second metallic contact layer and the second semiconductor layer, wherein a semiconductor material of the semiconductor contact layer includes the first, second and third composition elements, and wherein a concentration of the first and second composition elements varies from a position on a side of the second semiconductor layer to a position on a side of the second metallic contact layer.

Optoelectronic semiconductor component having a semiconductor contact layer and method for producing the optoelectronic semiconductor component

In an embodiment a composite semiconductor component includes a carrier substrate having a plurality of projecting elements projecting from a first main surface of the carrier substrate, an electrically conductive material electrically conductively connected to a contact region of the carrier substrate and located on at least one of the projecting elements, some of the projecting elements not being covered with the electrically conductive material and a semiconductor chip arranged on the carrier substrate and having at a first surface at least one contact pad electrically connected to the electrically conductive material on at least one element, wherein, at a position at which the contact pad and the electrically conductive material on the projecting element are in each case in contact with one another, the contact pad has a larger lateral extent than the projecting element in each case.

Composite semiconductor component having projecting elements projecting from a carrier substrate and method for producing the composite semiconductor component

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Wuppertal, Germany

Alexander F Pfeuffer