International Business Machines Corporation

Shin-etsu Chemical Co., Ltd.

Alexander Edward Hess

Rudy J Wojtecki

Takeru Watanabe

Tsutomu Ogihara

Seiichiro Tachibana

Daniel Sanders

Gregory Breyta

Keisuke Niida

Takashi Sawamura

Hiroko Nagai

Son Van Nguyen

Cornelius Brown Peethala

Thomas J Haigh, Jr

Balasubramanian S Pranatharthi Haran

Noel Arellano

Daniel Paul Sanders

A method is presented for forming a fully aligned via (FAV) structure. The method includes depositing a first dielectric adjacent a conductive material, forming a surface aligned monolayer (SAM) over the conductive material, the SAM defining a long chain SAM formed by a layer-by-layer growth technique, depositing a second dielectric over the SAM and the first dielectric, performing chemical mechanical polishing (CMP) to planarize the second dielectric, and etching the SAM to form the FAV structure.

Selective deposition with SAM for fully aligned via

A compound shown by the following general formula (1-1), AR1 and AR2 each independently represent an aromatic ring or an aromatic ring containing at least one nitrogen and/or sulfur atom, two AR1s, AR1 and AR2, or two AR2s are optionally bonded; AR3 represents a benzene, naphthalene, thiophene, pyridine, or diazine ring; A represents an organic group; B represents an anionic leaving group; Y represents a divalent organic group; 'p' is 1 or 2; 'q' is 1 or 2; &#x201c;r&#x201d; is 0 or 1; &#x201c;s&#x201d; is 2 to 4; when s=2, Z represents a single bond, divalent atom, or divalent organic group; and when s=3 or 4, Z represents a trivalent or quadrivalent atom or organic group. This compound cures to form an organic film, and also forms an organic under layer film.

Compound and composition for forming organic film

A compound includes two or more structures shown by the following general formula (1-1) in the molecule, 'Ar' represents an aromatic ring or one that contains at least one nitrogen atom and/or sulfur atom optionally having a substituent, and two Ars are optionally bonded with each other to form a ring structure; the broken line represents a bond with Y; Y represents a divalent or trivalent organic group having 6 to 30 carbon atoms that contains an aromatic ring or a heteroaromatic ring optionally having a substituent, the bonds of which are located in a structure of the aromatic ring or the heteroaromatic ring; R represents a hydrogen atom or a monovalent group having 1 to 68 carbon atoms. This compound can be cured even in an inert gas not only in air atmosphere without forming byproducts, and can form an organic under layer film.

Compound, method for manufacturing the compound, and composition for forming organic film

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San Jose, CA, United States of America

Alexander Edward Hess