Psemi Corporation

Peregrine Semiconductor Corporation

Memsic, Inc.

Other

Motorola Corporation

Cts Corporation

Aceinna Transducer Systems Co., Ltd.

Memsic Semiconductor (tianjin) Co., Ltd.

Alexander Dribinsky

Christopher Nelles Brindle

Dylan J Kelly

Tae Youn Kim

Mark L Burgener

Michael Andrew Stuber

George P Imthurn

Clint L Kemerling

Robert Bernard Welstand

Gregory P Pucci

Lawrence Edwin Connell

Yang Zhao

Yongyao Cai

Albert M Leung

Michael E Rebeschini

Tae-Youn Kim

Adrian P Brokaw

Leyue Jiang

Mathew Varghese

Weize Xu

Gary J O'Brien

Kenichi Katsumoto

Bin Liu

Hongzhi Sun

John Newton

A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch includes switching transistors coupled in series, referred to as 'stacked' transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. The charge injection control elements include resistors or transistors. A method for controlling charge injection in a switch circuit is disclosed whereby injected charge is generated at resistively-isolated nodes between series coupled switching transistors, and the injected charge is conveyed to at least one node of the switch circuit that is not resistively-isolated.

Circuit and method for controlling charge injection in radio frequency switches

A method and apparatus are disclosed for use in improving gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit includes a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET. The SOI MOSFET is adapted to have a selected average time-to-breakdown, responsive to the first and second determinations, and the circuit is operated using techniques for accumulated charge control operatively coupled to the SOI MOSFET. In one embodiment, the accumulated charge control techniques include using an accumulated charge sink operatively coupled to the SOI MOSFET body.

Method and apparatus improving gate oxide reliability by controlling accumulated charge

A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as 'stacked' transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors. A method for controlling charge injection in a switch circuit is disclosed whereby injected charge is generated at resistively-isolated nodes between series coupled switching transistors, and the injected charge is conveyed to at least one node of the switch circuit that is not resistively-isolated.

Thermal convection based accelerometers and heating control methods therefor are described. The heating control method includes: sensing a temperature in the enclosed cavity and generating a temperature voltage signal; amplifying the temperature voltage signal to obtain an amplified temperature voltage signal; calculating a voltage difference between the amplified temperature voltage signal and a reference voltage signal; converting the voltage difference into a digital sequence by using a modulator; obtaining a heating power adjustment factor representing the voltage difference based on the digital sequence; obtaining a heating power control parameter based on the heating power adjustment factor and an initial heating power factor; converting the heating power control parameter into a switch control signal; and turning on or off a heating control switch coupling with a heating resistor for heating the enclosed cavity in series according to the switch control signal.

Thermal convection based accelerometer and heating control method therefor

A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET. The SOI MOSFET is adapted to have a selected average time-to-breakdown, responsive to the first and second determinations, and the circuit is operated using techniques for accumulated charge control operatively coupled to the SOI MOSFET. In one embodiment, the accumulated charge control techniques include using an accumulated charge sink operatively coupled to the SOI MOSFET body.

A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOD metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET. The SOI MOSFET is adapted to have a selected average time-to-breakdown, responsive to the first and second determinations, and the circuit is operated using techniques for accumulated charge control operatively coupled to the SOI MOSFET. In one embodiment, the accumulated charge control techniques include using an accumulated charge sink operatively coupled to the SOI MOSFET body.

A linearity compensation circuit is disclosed for improving the linearity of a sensing signal. The linearity compensation circuit may include a compensator that is capable of receiving a sensing signal from a sensor and generating a compensation signal based on the sensing signal. The linearity compensation circuit may also include an output circuit that is capable of combining the compensation signal and the sensing signal to generate a compensated signal that exhibits an improved linearity. Also disclosed is a sensing apparatus which includes a sensor and the linearity compensation circuit. The sensing apparatus may thus be able to generate a sensing signal that is linear over a wider dynamic range.

Linearity compensation circuit and sensing apparatus using the same

An interface within an electronic device coupled to a serial communications bus having one or more serial communications lines generates a reference voltage source within the electronic device from the logic signals carried on the serial communications line(s). The generated reference voltage source is used within the electronic device to decode the logic signals received from the serial communications line(s).

Interface to a serial communications bus

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Naperville, IL, United States of America

Alexander Dribinsky