X-fab Semiconductor Foundries Ag

X-fab Semiconductor Foundries Gmbh

Alexander Dietrich Hölke

Deb Kumar Pal

Kia Yaw Kee

Elizabeth Kho Ching Tee

Steven John Pilkington

Florin Udrea

Marina Antoniou

Yang Hao

Hao Yang

An SOI or PSOI device including a device structure having a plurality of doped semiconductor regions. One or more of the doped semiconductor regions is in electrical communication with one or more electrical terminals. The device further includes an insulator layer located between a bottom surface of the device structure and a handle wafer. The device has an insulator trench structure located between a side surface of the device structure and a lateral semiconductor region located laterally with respect to the device structure. The insulator layer and the insulator trench structure are configured to insulate the device structure from the handle wafer and the lateral semiconductor region, and the insulator trench structure includes a plurality of insulator trenches.

Semiconductor device

A semiconductor device including a p or p+ doped portion and an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion. The device further includes an insulating portion provided adjacent the drift portion and at least one of the doped portions in a region where the drift portion and the at least one doped portion meet. The device further includes at least one additional portion, wherein the at least one additional portion is located such that, when the doped portions and the at least one additional portion are biased, the electrical potential lines leave the semiconductor drift portion homogeneously.

A semiconductor device comprising: a p or p+ doped portion; an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion; an insulating portion provided adjacent the drift portion and at least one of the doped portions in a region where the drift portion and said at least one doped portion meet; and at least one additional portion which is arranged for significantly reducing the variation of the electric field strength in said region when a voltage difference is applied between the doped portions.

A semiconductor device including a p or p+ doped portion and an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion. The device further includes at least one termination portion provided adjacent to the drift portion. The at least one termination portion comprises a Super Junction structure.

Growing community of inventors

Sarawak, Malaysia

Alexander Dietrich Hölke