Puregress Inc.

Applied Materials, Inc.

Alexander David Glew

Douglas B Noyes

Steve G Ghanayem

Andrew David Johnson

Ravi Rajagopalan

Leslie L Briley, Jr

A compact, in-line valve assembly consists of a hollow valve body, a seat, and a first diaphragm assembly including a deflectable portion forming a first volume between the seat and the first diaphragm assembly. A second diaphragm is attached to the first diaphragm assembly such that a second volume is defined between the second diaphragm and the second opening. A third volume is formed between the first diaphragm assembly and the second diaphragm and is sealed from the first volume and the second volume. A process flows through the first diaphragm assembly between the first volume and the second volume. A low-leak rate, self-aligning head assembly including a stem and a head coupled are coupled to the first diaphragm assembly. A deflection of the deflectable portion and the second diaphragm provides movement to open and close the head from the valve seat.

Control valves

A method and apparatus to control the deposition rate of a refractory metal film in a semiconductor fabrication process by controlling a quantity of ethylene present. The method includes placing a substrate in a deposition zone, of a semiconductor process chamber, flowing, into the deposition zone, a process gas including a refractory metal source, an inert carrier gas, and a hydrocarbon. Typically, the refractory metal source is tungsten hexafluoride, WF,, and the inert gas is argon, Ar. The ethylene may be premixed with either the argon or the tungsten hexafluoride to form a homogenous mixture. However, an in situ mixing apparatus may also be employed.

Method for high rate deposition of tungsten

Growing community of inventors

Los Altos, CA, United States of America

Alexander David Glew