Telefunken Electronic Gmbh

Alexander Colquhoun

Erhard Kohn

Klaus Berchtold

The invention relates to a measuring system having a measuring array comprising a transmission and reception section and an electronic evaluation unit. In accordance with the invention, the distance between a first point and a second point is determined by moving the measuring array between the two points using the Doppler effect, with an intermediate frequency being formed in the transmission and reception section from the transmission frequency of the signal emitted by the transmission section and from the reception frequency of the signal reflected off a fixed object and picked up in the reception section, and the number of periods of intermediate frequency generated during the measuring operation being counted in the electronic evaluation unit to derive the distance.

Measuring system

The invention relates to a field-effect transistor having a drain region, a source region and a gate electrode for influencing a channel area. The invention consists of arranging the source region and the gate electrode one above the other in a projection onto the channel plane such that the effective length is so small that an increase of the electron velocity in the channel is achieved.

Field-effect transistor

The invention relates to a process for the fabrication of a field-effect transistor as described in German Patent Application No. P 35 35 002.4, corresponding to U.S. application Ser. No. 06/914,540 comprises first covering a semiconductor member with a layer which forms the channel region and part of which is covered with a passivation layer. Impurities are implanted into the exposed regions of the semiconductor surface and form underneath the channel region highly doped source and drain regions. A surface layer of the passivation layer is then removed in a section adjacent to the source region and a gate electrode is formed on the thus exposed narrow area of the channel region.

Process for the fabrication of a Schottky gate field-effect transistor

A varactor or mixer diode comprises a mesa shaped semiconductor element having a p-n junction barrier layer or retifying junction on its upper face and a substrate contact on its opposite face, the substrate contact extending over the side faces of the semiconductor element and ending at a small spacing from the barrier layer or junction.

Varactor or mixer diode with surrounding substrate metal contact and top

A variable capacitance diode comprises a low resistance semi-conductor substrate on which is epitaxially deposited three layers, a first layer adjacent the substrate having an impurity concentration which decreases towards the substrate, a very thin intermediate region and a relatively thin surface region of lower doping than the intermediate region, a barrier being formed on or in the outer surface of the relativey thin surface region. The invention also includes a method of making such a diode.

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Heilbronn-Frankenbach, Germany

Alexander Colquhoun