Max-planck-gesellschaft Zur F&#xf6;rderung Der Wissenschaften E. V.

Alexander Bähr

Rainer Richter

Florian Schopper

Jelena Ninkovic

Peter Lechner

Johannes Treis

The invention relates to a DEPFET comprising: a semiconductor substrate () of a first conduction type, which has a first main surface () and a second main surface (), which are opposite one another; a source terminal region () of a second conduction type on the first main surface (); a drain terminal region () of a second conduction type; a channel region (), which is arranged between the source terminal region () and the drain terminal region (); a gate electrode (), which is separated from the channel region () by a gate insulator (); a rear activation region () of a second conduction type, which is formed on the second main surface (); and a substrate doping increase region () of a first conduction type, which is formed at least under the source terminal region () and under the channel region (), the substrate doping increase region () having a signal charge control region () of the first conduction type below the gate electrode (), in which signal charge control region the effective doping dose has a higher value than at other points of the substrate doping increase region () below the gate electrode.

DEPFET transistor

An avalanche photodiode array for detecting electromagnetic radiation comprises: a semiconductor substrate () having a first main surface () and a second main surface (), which are opposite one another, a plurality of n-doped anode regions () formed at the first main surface () and separated from one another by pixel isolation regions (), a p-doped cathode region () arranged at the second main surface () opposite the anode regions, a drift region () between the plurality of anode regions () and the cathode region (), and a p-doped multiplication layer () arranged below the plurality of anode regions () and below the pixel isolation regions (), and is characterized by an n-doped field reduction layer () arranged below the plurality of anode regions () and the pixel isolation regions () and above the multiplication layer ().

Avalanche photodiode array

DEPFET transistor and method of manufacturing a DEPFET transistor

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Gröbenzell, Germany

Alexander Bähr