Applied Materials, Inc.

Fei Comapny

Alexander Buxbaum

Melvin Warren Montgomery

Gilad Almogy

Christopher Dennis Bencher

Jian Ding

Wendy H Yeh

Yung-Hee Yvette Lee

Michael Schmidt

A method for using differential imaging for applications involving TEM samples by allowing operators to take multiple images during a procedure involving a focused ion beam procedure and overlaying the multiple images to create a differential image that clearly shows the differences between milling steps. The methods also involve generating real-time images of the area being milled and using the overlays of the differential images to show small changes in each image, and thus highlight the ion beam milling location. The methods also involve automating the process of creating differential images and using them to automatically mill subsequent slices.

Differential imaging with pattern recognition for process automation of cross sectioning applications

A method and apparatus for use in surface delayering for fault isolation and defect localization of a sample work piece is provided. More particularly, a method and apparatus for mechanically peeling of one or more layers from the sample in a rapid, controlled, and accurate manner is provided. A programmable actuator includes a delayering probe tip with a cutting edge that is shaped to quickly and accurately peel away a layer of material from a sample. The cutting face of the delayering probe tip is configured so that each peeling step peels away an area of material having a linear dimension substantially equal to the linear dimension of the delayering probe tip cutting face. The surface delayering may take place inside a vacuum chamber so that the target area of the sample can be observed in-situ with FIB/SEM imaging.

Surface delayering with a programmed manipulator

An anti-reflective hard mask layer left on a radiation-blocking layer during fabrication of a reticle provides functionality when the reticle is used in a semiconductor device manufacturing process.

Method of reducing critical dimension bias during fabrication of a semiconductor device

We are able to reduce the average process bias in a patterned reticle by treating the developed, patterned photoresist which is used to transfer a pattern to the reticle with a silicon-containing reagent prior to the pattern transfer. The process bias is a measure of the difference between a nominal feature critical dimension (CD) produced in a patterned reticle and the nominal isofocal CD for the feature. Improvement of the average process bias is directly related to an improved resolution in the mask features. The reduction in average process bias achievable using the method of the invention typically ranges from about 30% to about 70%. This reduction in average process bias enables the printing of smaller features.

Method of reducing the average process bias during production of a reticle

We have reduced the critical dimension bias for reticle fabrication. Pattern transfer to the radiation-blocking layer of the reticle substrate essentially depends upon use of a hard mask to which the pattern is transferred from a photoresist. The photoresist pull back which occurs during pattern transfer to the hard mask is minimalized. In addition, a hard mask material having anti-reflective properties which are matched to the reflective characteristics of the radiation-blocking layer enables a reduction in critical dimension size and an improvement in the pattern feature integrity in the hard mask itself. An anti-reflective hard mask layer left on the radiation-blocking layer provides functionality when the reticle is used in a semiconductor device manufacturing process.

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Portland, OR, United States of America

Alexander Buxbaum