Infineon Technologies Ag

Infineon Technologies Austria Ag

Alexander Breymesser

Francisco Javier Santos Rodriguez

Hans-Joachim Schulze

Stephan Voss

Andre Brockmeier

Carsten Von Koblinski

Werner Schustereder

Bernhard Goller

Roland Rupp

Holger Schulze

Erich Griebl

Helmut Oefner

Matthias Kuenle

Ronny Kern

Peter Zorn

Gerhard Schmidt

Wolfgang Lehnert

Ravi Keshav Joshi

Carsten Schaeffer

Elmar Falck

Andreas Moser

Kamil Karlovsky

Michael Knabl

Tobias Franz Wolfgang Hoechbauer

Mihai Draghici

Johannes Georg Laven

Oliver Haeberlen

Rainer Leuschner

Manfred Mengel

Marko Swoboda

Thomas Christian Neidhart

Guenter Denifl

Franz Dielacher

Vijaye Rajaraman

Mathias Plappert

Sokratis Sgouridis

Karl Mayer

Yvonne Gawlina-Schmidl

Matteo Piccin

Christian Kasztelan

Alexander Susiti

Andreas Niederhofer

Christine Moser

Shuhai Liu

Ursula Meyer

Klaus Sobe

Eva-Maria Hof

A method of forming a semiconductor device includes: forming a first semiconductor layer on a semiconductor substrate, the first semiconductor layer being of the same dopant type as the semiconductor substrate, the first semiconductor layer having a higher dopant concentration than the semiconductor substrate; increasing the porosity of the first semiconductor layer; first annealing the first semiconductor layer in an atmosphere including an inert gas; forming a second semiconductor layer on the first semiconductor layer; and separating the second semiconductor layer from the semiconductor substrate by splitting within the first semiconductor layer. Additional methods of forming a semiconductor device are described.

Methods for forming a semiconductor device having a second semiconductor layer on a first semiconductor layer

A semiconductor device and a method of manufacturing a semiconductor are provided. In an embodiment, a metallic layer may be formed over a semiconductor substrate. An anti-reflective layer may be formed over the metallic layer. A passivation layer may be formed over the anti-reflective layer. An opening may be formed in the passivation layer to expose the anti-reflective layer.

Semiconductor device protection using an anti-reflective layer

A method of forming a current measurement device includes providing a glass substrate having first and second substantially planar surfaces that are opposite one another, forming a plurality of through-vias in the glass substrate that each extend between the first and second substantially planar surfaces, and forming conductive tracks on the glass substrate that connect adjacent ones of the through-vias together. Forming the plurality of through-vias includes applying radiation to the glass substrate, and the conductive tracks and the through-vias collectively form a coil structure in the glass substrate.

Rogowski coil integrated in glass substrate

A method of forming a semiconductor device, including forming a first semiconductor layer on a semiconductor substrate, the first semiconductor layer being of the same dopant type as the semiconductor substrate, the first semiconductor layer having a higher dopant concentration than the semiconductor substrate, increasing the porosity of the first semiconductor layer, first annealing the first semiconductor layer at a temperature of at least 1050&#xb0; C., forming a second semiconductor layer on the first semiconductor layer and separating the second semiconductor layer from the semiconductor substrate by splitting within the first semiconductor layer.

Methods for forming a semiconductor device

A method includes forming a plurality of first semiconductor mesa structures at a first semiconductor substrate. The first semiconductor substrate has a first conductivity type. The method further includes forming a plurality of second semiconductor mesa structures at a second semiconductor substrate. The second semiconductor substrate has a second conductivity type. The method further includes providing a glass substrate between the first semiconductor substrate and the second semiconductor substrate. The method includes connecting the first semiconductor substrate to the second semiconductor substrate so that at least a portion of the glass substrate is located laterally between the first semiconductor mesa structures of the plurality of first semiconductor mesa structures and the second semiconductor mesa structures of the plurality of second semiconductor mesa structures.

Thermoelectric devices and methods for forming thermoelectric devices

Methods for processing a semiconductor substrate are proposed. An example of a method includes forming cavities in the semiconductor substrate by implanting ions through a first surface of the semiconductor substrate. The cavities define a separation layer in the semiconductor substrate. A semiconductor layer is formed on the first surface of the semiconductor substrate. Semiconductor device elements are formed in the semiconductor layer. The semiconductor substrate is separated along the separation layer into a first substrate part including the semiconductor layer and a second substrate part.

Methods for processing a semiconductor substrate

A method for processing a semiconductor wafer is proposed. The method may include reducing a thickness of the semiconductor wafer. A carrier structure is placed on a first side of the semiconductor wafer, e.g. before or after reducing the thickness of the semiconductor wafer. The method further includes providing a support structure on a second side of the semiconductor wafer opposite to the first side, e.g. after reducing the thickness of the semiconductor wafer. Methods for welding a support structure onto a semiconductor wafer are proposed. Further, semiconductor composite structures with support structures welded onto a semiconductor wafer are proposed.

Method for processing a semiconductor wafer, semiconductor composite structure and support structure for semiconductor wafer

A method for forming semiconductor devices includes attaching a glass structure to a wide band-gap semiconductor wafer having a plurality of semiconductor devices. The method further includes forming at least one pad structure electrically connected to at least one doping region of a semiconductor substrate of the wide band-gap semiconductor wafer, by forming electrically conductive material within at least one opening extending through the glass structure.

Semiconductor package devices and method for forming semiconductor package devices

A semiconductor element is formed in a mesa portion of a semiconductor substrate. A cavity is formed in a working surface of the semiconductor substrate. The semiconductor substrate is brought in contact with a glass piece made of a glass material and having a protrusion. The glass piece and the semiconductor substrate are arranged such that the protrusion extends into the cavity. The glass piece is bonded to the semiconductor substrate. The glass piece is in-situ bonded to the semiconductor substrate by pressing the glass piece against the semiconductor substrate. During the pressing a temperature of the glass piece exceeds a glass transition temperature and the temperature and a force exerted on the glass piece are controlled to fluidify the glass material and after re-solidifying the protrusion completely fills the cavity.

Glass piece and methods of manufacturing glass pieces and semiconductor devices with glass pieces

According to an embodiment of a method described herein, a silicon carbide substrate is provided that includes a plurality of device regions. A front side metallization may be provided at a front side of the silicon carbide substrate. The method may further comprise providing an auxiliary structure at a backside of the silicon carbide substrate. The auxiliary structure includes a plurality of laterally separated metal portions. Each metal portion is in contact with one device region of the plurality of device regions.

Semiconductor device and method of manufacturing a semiconductor device

Crystal lattice vacancies are generated in a pretreated section of a semiconductor layer directly adjoining a process surface. Dopants are implanted at least into the pretreated section. A melt section of the semiconductor layer is heated by irradiating the process surface with a laser beam activating the implanted dopants at least in the melt section.

Semiconductor devices with steep junctions and methods of manufacturing thereof

A method for processing a silicon carbide wafer includes implanting ions into the silicon carbide wafer to form an absorption layer in the silicon carbide wafer. The absorption coefficient of the absorption layer is at least 100 times the absorption coefficient of silicon carbide material of the silicon carbide wafer outside the absorption layer, for light of a target wavelength. The silicon carbide wafer is split along the absorption layer at least by irradiating the silicon carbide wafer with light of the target wavelength to obtain a silicon carbide device wafer and a remaining silicon carbide wafer.

Methods for processing a silicon carbide wafer, and a silicon carbide semiconductor device

A battery includes a first substrate having a first main surface, a second substrate made of a conducting material or semiconductor material, and a carrier of an insulating material. The carrier has a first and a second main surfaces, the second substrate being attached to the first main surface of the carrier. An opening is formed in the second main surface of the carrier to uncover a portion of a second main surface of the second substrate. The second main surface of the carrier is attached to the first substrate, thereby forming a cavity. The battery further includes an electrolyte disposed in the cavity.

Battery, integrated circuit and method of manufacturing a battery

A method of processing a power semiconductor device includes: providing a semiconductor body of the power semiconductor device; coupling a mask to the semiconductor body; and subjecting the semiconductor body to an ion implantation such that implantation ions traverse the mask prior to entering the semiconductor body.

Superjunction structure in a power semiconductor device

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Villach, Austria

Alexander Breymesser